[en] KNb₃O₈ showed blue luminescence of 450 nm at 300 K. The emission spectra of K₄Nb₆O₁₇ and KNb₃O₈ at 77 K were red-shifted by H₂O intercalation and H⁺-exchange, indicating that the photochemical properties of these hosts were changed with interlayer conditions. (author)

[en] The excitation and emission spectra of CaWO₄, MgWO₄, PbWO₄, ZnWO₄, and CaMoO₄ were analyzed by a configurational coordination model. The spectral line shapes simulated by a configurational coordination model with a singlet ground state and an excited triplet state well explained the line shape of the luminescence spectra and the line shape at the rising part of the excitation spectra of these salts at room temperature. The energy level of the excited triplet state and the reorganization energies at the ground state and the triplet state were determined. It was concluded that the potential curve at the excited state becomes shallower than that at the ground state for these systems. (author)

[en] Highly crystallized luminescent SrWO₄ film has been prepared on a tungsten substrate in an alkaline solution containing strontium ions by an electrochemical method using constant direct current of 1 mA/cm² at room temperature (25 C). This film showed only a single blue emission at 461 nm with the excitation of 248 nm at liquid nitrogen temperature (-196 C), strongly suggesting it consists of well-crystallized defect-free crystals

[en] Electrochemical luminescence (ECL) at n-type ZnO semiconductor electrode was measured under anodic polarization. Scanning the potential imposed on the ZnO electrode, emission was suddenly observed around +20 V. Using the ZnO electrodes doped with rare earth metal ions as Sm³⁺, Eu³⁺, Dy³⁺, Ho³⁺ and Er³⁺, much brighter emission was obtained than the ECL of non-doped ZnO. These emission spectra are ascribed to the rare earth metal ions, respectively. This result would show that emission centers of doped ions were selectively excited by electrons that were injected from electrolyte to the electrode by avalanche breakdown under strong anodic bias on the ZnO