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AbstractAbstract
No abstract available
Original Title
Issledovaniya ehlektroprovodnosti monokristallov CdSe v oblasti vysokikh temperatur
Source
For English translation see the journal Ukr. Phys. J.
Record Type
Journal Article
Journal
Ukrainskij Fizicheskij Zhurnal; (no.8); p. 1377-1383
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Vysokotemperaturnye issledovaniya statsionarnoj i neravnovesnoj ehlektroprovodnosti kristallov sul'fida kadmiya
Primary Subject
Source
For English translation see the journal Ukr. Phys. J.
Record Type
Journal Article
Journal
Ukrainskij Fizicheskij Zhurnal; v. 18(4); p. 615-620
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Vliyanie primesej na vysokotemperaturnuyu ehlektroprovodnost' kristallov CdTe
Primary Subject
Source
For English translation see the journal Inorg. Mater.
Record Type
Journal Article
Journal
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy; v. 8(6); p. 1019-1024
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Kompensatsiya provodimosti kristallov tellurida kadmiya
Source
For English translation see the journal Sov. Phys.-Semicond.; Published in summary form only.
Record Type
Journal Article
Journal
Fiz. Tekh. Poluprov; v. 6(4); p. 747-749
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Vysokotemperaturnye relaksatsii ehlektroprovodnosti kristallov CdTe indutsiruemye izmeneniem davleniya para kadmiya
Primary Subject
Source
For English translation see the journal Inorg. Mater.
Record Type
Journal Article
Journal
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy; v. 9(3); p. 361-367
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Osobennosti vysokotemperaturnoj ehlektroprovodnosti kristallov CdTe, legirovannykh indiem
Primary Subject
Source
For English translation see the journal Inorg. Mater.
Record Type
Journal Article
Journal
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy; v. 10(6); p. 975-979
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Nablyudenie vysokotemperaturnykh relaksatsij ehlektroprovodnosti (VREh) v kristallakh tellurida kadmiya
Source
For English translation see the journal Sov. Phys.-Semicond.
Record Type
Journal Article
Journal
Fiz. Tekh. Poluprovn; v. 6(5); p. 886-981
Country of publication
CRYSTAL STRUCTURE, ACTIVATION ENERGY, CADMIUM COMPOUNDS, CARRIER DENSITY, COPPER, CRYSTAL DEFECTS, CRYSTALS, DIFFUSION, ELECTRIC CONDUCTIVITY, EQUILIBRIUM, HIGH TEMPERATURE, IMPURITIES, NEUTRAL PARTICLES, RELAXATION, SEMICONDUCTOR MATERIALS, TELLURIDES, TEMPERATURE DEPENDENCE, TRANSITION ELEMENTS, VAPOR PRESSURE, VAPORS
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Estestvenno legirovannye n- p-struktury v telluride kadmiya
Source
Published in summary form only; for English translation see the journal Sov. Phys. J.
Record Type
Journal Article
Journal
Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika; v. 9(124); p. 150-152
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Proyavlenie defektnoj struktury tellurida kadmiya v vysoko-temperaturnoj ehlektroprovodnosti
Primary Subject
Source
For English translation see the journal. Sov. Phys. J.
Record Type
Journal Article
Journal
Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika; (no.1); p. 71-75
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] Correlation dependences between generation lifetimes, surface generation rates and surface state densities under γ-irradiation effect on the silicon-base MDS structures are presented. It is shown that γ-radiation effect of up to 105 rad is similar to high-temperature annealing and can be used for improvement of MDS structure recombination characteristics
Original Title
Vliyanie γ-oblucheniya na generatsiyu nositelej zaryada v MDP strukturakh na osnove kremniya
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
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