[en] Photoluminescence (PL) at 77 K from Cd_1-xZn_xTe samples (x = 0, 0.005 and 0.01) annealed at 900 deg. C and cadmium vapor pressure P_Cd = 3 x 10⁴-2 x 10⁵ Pa has been studied. It was found that the contribution of the 1-eV band to the spectrum-integrated PL from these samples is independent of P_Cd, in contrast to Cd_0.95Zn_0.05Te samples in which this contribution increases up to ∼90% as P_Cd grows. The band is not shifted to shorter wavelengths as x becomes larger. The conclusion that Zn vacancies are involved in the formation of Cd_1-xZn_xTe properties is confirmed. The 1-eV band is attributed to capture of free holes to acceptor levels related to vacancies of both cadmium and zinc. These levels are closely spaced and, therefore, are difficult to resolve

[en] The endohedral metallofullerenols Me@C_2_n(OH)_3_8_–_4_0 + C_2_n(OH)_3_8_–_4_0 (Me = Tb, Sc, Gd, Fe, Pr, Mo) have been obtained and their radiation resistance under irradiation by a neutron flux of 8 × 10"1"3 cm"–"2 s"–"1 has been studied. The factors affecting the radiation resistance of endohedral metallofullerenols are discussed.

[en] The parameters of an electric-arc facility for the synthesis of fullerenes and endohedral metallofullerenes are optimized. The resistance of C_6_0 and C_7_0 fullerenes and C_6_0(OH)_3_0 and C_7_0(OH)_3_0 fullerenols against neutron irradiation is studied. It is established that the radiation resistance of the fullerenes is higher than that of the fullerenols, but the radiation resistance of the Gd@C_2_n endometallofullerenes is lower than that of the corresponding Gd@C_2_n(OH)_3_8 fullerenols. The radiation resistance of mixtures of Me@C_2_n(OH)_3_8 (Me = Gd, Tb, Sc, Fe, and Pr) endometallofullerenes with C_6_0(OH)_3_0 is determined. The factors affecting the radiation resistance of the fullerenes and fullerenols are discussed.

[en] The photoluminescence (PL) of GaAs/Al_0.35Ga_0.65As:Be quantum wells is studied at temperatures of 77 and 300 K under conditions of uniaxial compression along the [110] direction. There are two main lines in the PL spectra; at zero pressure and T = 77 K, the peaks appear at 1.517 and 1.532 eV. Comparison of the pressure dependences of the peak positions and the polarization of the PL measured experimentally with those calculated theoretically gives evidence that, at T ≥ 77 K, these bands originate from the recombination of free electrons with heavy and light holes in the GaAs valence band

[en] The photoluminescence (PL) of GaAs/Al_0.35Ga_0.65As:Be quantum wells is studied at temperatures of 77 and 300 K under conditions of uniaxial compression along the [110] direction. There are two main lines in the PL spectra; at zero pressure and T = 77 K, the peaks appear at 1.517 and 1.532 eV. Comparison of the pressure dependences of the peak positions and the polarization of the PL measured experimentally with those calculated theoretically gives evidence that, at T ≥ 77 K, these bands originate from the recombination of free electrons with heavy and light holes in the GaAs valence band.

[en] Endohedral lanthanide metallofullerenes and their water-soluble biocompatible derivatives have been synthesized. The effect that fast-neutron irradiation has on the stability and nuclear physical properties of endohedral metallofullerenes that are used as magnetocontrast materials (⁴⁶Sc, ¹⁴⁰La, ¹⁴¹Nd, ¹⁵³Sm, ¹⁵²Eu, ¹⁵⁴Eu, ¹⁵³Sm, ¹⁶⁰Tb, ¹⁶⁹Yb, ¹⁷⁰Tm (isomers I and III), and ¹⁷⁷Lu) is studied. Our hypothesis, according to which carbon-shell relaxation is based on the fast nonradiative processes of an electron shake-off type, is confirmed.

[en] We report on the development and test of a fast three-dimensional Track-Finder for the Level-1 trigger of the CMS endcap muon system. System tests included four types of custom circuit boards clocked at 40 MHz, optical links, and a high-speed custom auxiliary backplane in a VME crate. The hardware results, calculated using field-programmable gate arrays, programmable logic devices, and memory lookup tables, agreed bit-for-bit with software simulations for both random patterns and realistic tracks

[en] Endohedral metallofullerenes Me@C_2n (n = 30–50), their hydroxylated derivatives Me@C_2n(OH)_38–40 (Me = Tm, Ho, Eu, Sm, Co), and fullerenol С₆₀(OH)₃₈ have been synthesized The radiation resistance of these structures under irradiation in reactor by thermal and fast neutron fluxes in the fluence range of 1018–1019 cm^–2 (cadmium ratio of ~10) has been analyzed. Endofullerenols are shown to be more stable in comparison with initial endohedral fullerenes; the molecules containing Eu and Sm (atoms characterized by the largest slow-neutron absorption cross section) turned out to be most stable. The mechanism of the formation of secondary Eu and Sm endofullerenols is discussed taking into account the neutron capture and emission of γ quanta by excited nuclei, which acquire the recoil energy.

[en] A coating technology for application of hardening of diamond coatings on carbide tools for treatment of mineral fiberglass based on quartz texture with chromate-phosphate cohesive (FQTCC) is proposed. The purpose of this development is to increase the edge strength of the tool. The use of the technology described above allowed, in comparison with the cutter without diamond coating, to increase the productivity of processing by 11.5 times, by cutting speed by 2.3 times, and by the minute supply by 5.0 times. The approach is based on changing the configuration of the microwave field when applying a diamond coating on hard alloy substrates in the microwave plasma of the ARDIS-100 reactor by using specially designed plateholders. This method allows for the group coating on several substrates in a single process. A simplified mathematical model for calculating the temperature of the top of the cutter during the growth of a CVD diamond film, taking into account heat transfer through thermal conductivity and radiation, has been constructed. Temperature distribution on the surface of a tungsten carbide cutter in the temperature range optimal for diamond growth was constructed. The difference between the average (experimental) and maximum (calculated) temperature in such a cutter was from 80 to 138°C. (paper)

[en] Experimental and theoretical piezospectroscopic investigation of A⁺ centers in GaAs/AlGaAs quantum wells doped with beryllium is presented. Spectra of linearly polarized photoluminescence are studied experimentally depending on applied uniaxial pressure. A model of the A⁺ center in the quantum well in the presence of uniaxial deformation in the plane of the quantum well has been constructed. Analytical expressions for the level energy, optical transition intensities, and polarization ratio have been obtained. In the framework of the proposed theory, the experimentally observed change in the polarization ratio depending on pressure and the shift of the line maximum towards short waves are explained.