[en] Effect is investigated of treatment in a hydrogen plasma of glow discharge on the photoluminescence (PL) at 78 K of nondoped Al_0.3Ga_0.7As, silicon doped Al_0.28Ga_0.72As (n∼10¹⁷ cm^-3), nondoped GaAs, nondoped multilayer structures GaAs/Al_0.23Ga_0.77As with a set of quantum wells and nondoped double heterostructures GaAs/AlGaAs with separate electric and optical limitation. The structure were grown by the gas-phase epitaxy from organometallic compounds. As a result of hydrogenation was observed decreasing PL intensity of nondoped layers Al_0.3Ga_0.7As and GaAs and its amplification in the case of silicon doped layers Al_0.28Ga_0.72As. 12 refs., 5 figs

[en] The epitaxial layer sample of the Ga_0.82In_0.18As solid solution is studied. The arsenic atoms coordination is determined on the basis of the X-ray diffractometer measurements in its structure. The ratio of the As atoms in the coordination 4Ga, 3Ga + In and 2Ga + 2In corresponds to the superstructure wherein the In atoms chain extended in the [110] direction alternates with four Ga chains. The Ga₄InAs₅ is an ideal composition for such a superstructure. New peculiarities of the domain structure originating due to the temperature change in the tetrahedral bends configuration are detected