[en] There were 300 GeV protons used to produce Λ⁰ and anti Λ⁰ hyperons and K/sub s/⁰ mesons from beryllium, copper, and lead targets in the Fermilab neutral hyperon beam. The Lorentz invariant inclusive cross sections (Ed³sigma/dp vector³) in the projectile fragmentation region, 0.2 < x < 1.0, 0 < p/sub T/ < 2 GeV/c, are presented as functions of x = p/sub L/*/p/sub max/*, p/sub T/ and target. The neutral strange particles were detected by a conventional magnetic spectrometer and the data sample consisted of 1.1 x 10⁶ Λ⁰ s, 9.4 x 10⁴ K/sub s/⁰ s, and 1.7 x 10⁴ anti Λ⁰ s. The target dependence of the invariant cross section was found to be consistent with a power law which was used to perform an extrapolation to A = 1. Significant differences were observed in the x distributions for the three targets. The data were fit to a function of x and p/sub T/ to facilitate comparison with other experiments. Fits were also performed to a phenomenological function predicted by the triple Regge model. The model calculation was found to be consistent with the lambda production data in the region of phase space where the calculation is expected to be valid

[en] Two double-sided multistripe silicon detectors purchased from Micron Semiconductor, Ltd. have been bench tested. The devices are 40 mm x 40 mm x 300 μm thick, with 40 stripes on each side, in directions orthogonal to each other. Interstripe resistances of 250 ± 100 kΩ were measured on the non-diode (ohmic) side when the detectors were fully depleted. A Sr⁹⁰ source and charge sensitive amplifiers were used to measure charge correlations between orthogonal stripes on opposite sides of the detectors as a function of bias voltage. At a full depletion voltage of 42 V, the difference in pulse heights from opposite-side stripes gave a Gaussian distribution consistent with the amplifier noise, indicating that the detectors work well as two dimensional position sensitive devices. 5 refs., 6 figs

No abstract available

[en] The authors have obtained good signal correlations between orthogonal stripes on opposite sides of two double-sided silicon mini-stripe detectors from Micron SemiConductor, Ltd., England

[en] Results of radiation effects on selected junction field-effect transistors, MOS transistors and bipolar junction transistors are presented. Evaluations include both dc parameters, as well as capacitance and noise evaluations. Detailed noise data were obtained both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models are compared for a typical bipolar transistor charge-sensitive preamplifier

[en] Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier

[en] Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular at currents ≤ 1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier. (orig.)

[en] We study the feasibility of fabricating an optical link for the SLHC ATLAS silicon tracker based on the current pixel optical link architecture. The electrical signals between the current pixel modules and the optical modules are transmitted via micro-twisted cables. The optical signals between the optical modules and the data acquisition system are transmitted via radiation-hard/low-bandwidth SIMM fibres fusion spliced to radiation-tolerant/medium-bandwidth GRIN fibres. The link has several nice features. We have measured the bandwidths of the micro-twisted-pair cables to be ∼1 Gb/s and the fusion spliced fibre ribbon to be ∼2 Gb/s. We have irradiated PIN and VCSEL arrays with 24 GeV protons and find the arrays can operate up to the SLHC dosage. We have also demonstrated the feasibility of fabricating a novel opto-pack for housing VCSEL and PIN arrays with BeO as the substrate.

[en] We study the feasibility of fabricating an optical link for the SLHC ATLAS silicon tracker based on the current pixel optical link architecture. The electrical signals between the current pixel modules and the optical modules are transmitted via micro-twisted cables. The optical signals between the optical modules and the data acquisition system are transmitted via rad-hard SIMM fibers spliced to rad-tolerant GRIN fibers. The link has several nice features. We have measured the bandwidths of the transmission lines and the results indicate that the micro twisted-pair cables can transmit signals up to ∼1 Gb/s and the fusion spliced fiber ribbon can transmit signals up to ∼2 Gb/s. We have irradiated PIN and VCSEL arrays with 24 GeV protons and find at least one candidate PIN and one VCSEL array that can survive to the SLHC dosage

[en] The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgrade of LHC with ten times higher luminosity. We investigate the radiation-hardness and bandwidth of various components for possible application in the data transmission upgrade. For the electrical connection between the front-end electronics and the optical link, we study the possible use of a micro twisted-pair cable. The bandwidth is measured to be 640 Mb/s for transmission up to 1.4 m and 320 Mb/s for transmission up to 4 m if the signal is pre-emphasized. For the optical devices, we irradiated Vertical-Cavity Surface-Emitting Laser (VCSEL) and GaAs PIN arrays from three vendors and silicon PIN arrays from one vendor. All arrays can be operated up to the SLHC dosage except for the GaAs PIN arrays, which have very low responsivities after irradiation. We have also demonstrated the feasibility of fabricating a novel optical package for housing VCSEL and PIN arrays with BeO (beryllium oxide) as the substrate for efficient removal of heat.