[en] This paper is focused on thermally assisted magnetic random access memories (TA-MRAMs). It explains how the heating produced by Joule dissipation around the tunnel barrier of magnetic tunnel junctions (MTJs) can be used advantageously to assist writing in MRAMs. The main idea is to apply a heating pulse to the junction simultaneously with a magnetic field (field-induced thermally assisted (TA) switching). Since the heating current also provides a spin-transfer torque (current-induced TA switching), the magnetic field lines can be removed to increase the storage density of TA-MRAMs. Ultimately, thermally induced anisotropy reorientation (TIAR)-assisted spin-transfer torque switching can be used in MTJs with perpendicular magnetic anisotropy to obtain ultimate downsize scalability with reduced power consumption. TA writing allows extending the downsize scalability of MRAMs as it does in hard disk drive technology, but it also allows introducing new functionalities particularly useful for security applications (Match-in-Place™ technology). (paper)

[en] The all-optical magnetization reversal of magnetic layers, by picosecond optical pulses, is of particular interest as it shows the potential for energy-efficient and fast magnetic tunnel junction (MTJ) elements. This approach requires memory elements that are optically and electronically accessible, for optical writing and electronic read-out. In this paper, we propose the integration of indium tin oxide (ITO) as a transparent conducting electrode for magnetic tunnel junctions in integrated spintronic–photonic circuits. To provide light with sufficient energy to the MTJ free layer and allow electrical read-out of the MTJ state, we successfully integrated indium tin oxide as a top transparent electrode. The study shows that ITO film deposition by physical vapor deposition with conditions such as high source power and low O₂ flow achieves smooth and conductive thin films. Increase in grain size was associated with low resistivity. Deposition of 150 nm ITO at 300 W, O₂ flow of 1 sccm and 8.10⁻³ mbar vacuum pressure results in 4.8 × 10⁻⁴ Ω.cm resistivity and up to 80% transmittance at 800 nm wavelength. The patterning of ITO using CH₄/H₂ chemistry in a reactive ion etch process was investigated showing almost vertical sidewalls for diameters down to 50 nm. The ITO based process flow was compared to a standard magnetic tunnel junctions fabrication process flow based on Ta hard mask. Electrical measurements validate that the proposed process based on ITO results in properties equivalent to the standard process. We also show electrical results of magnetic tunnel junctions having all-optical switching top electrode fabricated with ITO for optical access. The developed ITO process flow shows very promising initial results and provides a way to fabricate these new devices to integrate all-optical switching magnetic tunnel junctions with electronic and photonic elements. (paper)

[en] In order to improve the magnetic and electrical properties of low resistance alumina based magnetic tunnel junctions, an off-axis method of sputtering has been investigated. It is shown that the tunnel magnetoresistance ratio can be greatly increased when there is an offset between the target and the wafer axes during the deposition of the ultrathin aluminum layer (off-axis sputtering) prior to its natural oxidation. The ferromagnetic coupling between the pinned and the free layer through the alumina barrier is also reduced compared to a classical on-axis deposition. This observation is interpreted as an improvement of the barrier quality, reducing both the roughness and the pinholes density. We assume that when the Al layer is sputtered off-axis, the magnetic and aluminum layers are protected from energetic neutralized Ar atoms bombardment.

[en] A new concept to increase the downsize scalability of perpendicular spin transfer torque magnetic random-access memory (p-STT-MRAM), called perpendicular shape anisotropy (PSA) STT-MRAM is presented. This approach consists of significantly increasing the thickness of the storage layer in p-STT-MRAM to values comparable to the cell diameter so as to induce a PSA in this layer which comes on top of the MgO/FeCoB interfacial anisotropy. This PSA-STT-MRAM is provided by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque (STT) magnetic random access memory, wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to this robust source of bulk anisotropy, PSA-STT-MRAM offers a greatly improved downsize scalability over conventional perpendicular p-STT-MRAM. Despite the large thickness of the storage layer, PSA-STT-MRAM cells can still be written by STT provided their thermal stability factor Δ is adjusted in the same range as in conventional p-STT-MRAM, i.e. Δ of the order of 60–100 depending on the memory capacity and required bit error rate. Moreover, a low damping material can be used for the thick FM material, thus leading to a reduction of the write current. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8 nm in diameter and the possibility to maintain thermal stability factor above 60 down to 4 nm diameter. We also show that thanks to the increased thickness of the storage layer, the anisotropy and therefore the memory retention are much less sensitive on temperature than in conventional p-STT-MRAM. This is very interesting for applications operating on a wide range of temperatures (e.g. automotive  −40 °C to  +150 °C), as well as to fulfill solder reflow compliance. (paper)

[en] The concept of perpendicular shape anisotropy spin-transfer-torque magnetic random access memory (PSA-STT-MRAM) consists of significantly increasing the thickness of the storage layer in STT-MRAM to values comparable to the cell diameter so as to induce a perpendicular shape anisotropy in this layer. This robust source of bulk anisotropy allows us to extend the downsize scalability of STT-MRAM towards a sub-10 nm technological node. However, due to the high aspect ratio of the patterned magnetic tunnel junction pillars, some of them may fall during the etching process or become tilted. To interpret the magnetoresistance loops measured on these PSA-STT-MRAM cells, it is important to know the exact direction of the applied field with respect to the pillar axis. We present here an experimental procedure based on 3D Stoner Wohlfarth astroid analysis which allows us to determine the pillar tilt angle. (paper)

[en] We investigate the effect of inserting an ultrathin Cu layer at Co/Pt interfaces in a (Co/Pt) multilayer with perpendicular magnetic anisotropy. We observe a clear correlation between structural properties probed by laser-assisted atom probe tomography and magnetic properties such as effective anisotropy. While Co and Pt are strongly mixed in a standard (Co/Pt) multilayer, inserting a thin Cu layer at Co/Pt interfaces strongly reduces the Co–Pt interdiffusion, leading to a well-defined layered stack with improved effective anisotropy. Such elements are of great importance for spintronic devices that require materials with high perpendicular magnetic anisotropy. (paper)

[en] Field-current phase diagrams were measured on in-plane anisotropy Co₆₀Fe₂₀B₂₀ magnetic tunnel junctions to obtain the spin transfer torque (STT) field-current switching window. These measurements were used to characterise junctions with varying free layer thicknesses from 2.5 down to 1.1 nm having a reduced effective demagnetizing field due to the perpendicular magnetic anisotropy at CoFeB/MgO interface. Diagrams were obtained with 100 ns current pulses, of either same or alternating polarity. When consecutive pulses have the same polarity, it is possible to realize the STT switching even for conditions having a low switching probability. This was evidenced in diagrams with consecutive pulses of alternating polarity, with 100% switching obtained at 4.7 MA/cm², compared to the lower 3.4 MA/cm² value for same polarity pulses. Although the low level of the current density window is higher in alternating polarity diagrams, the field window in both diagrams is the same and therefore independent of the pulse polarity sequence

[en] This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the voltage at the end of the write pulse, the STT decays more slowly or at least at the same rate as the temperature. This condition is necessary to make sure that the storage layer magnetization remains in the desired written direction during cooling of the cell. The influence of the write current pulse decay rate was investigated on two exchange biased synthetic ferrimagnet (SyF) electrodes. For a NiFe based electrode, a significant improvement in writing reproducibility was observed using a gradual linear voltage transition. The write error rate decreases by a factor of 10 when increasing the write pulse fall-time from ∼3 ns to 70 ns. For comparison, a second CoFe/NiFe based electrode was also reversed by magnetic field assisted by STT. In this case, no difference between sharp and linear write pulse fall shape was observed. We attribute this observation to the higher thermal stability of the CoFe/NiFe electrode during cooling. In real-time measurements of the magnetization reversal, it was found that Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling in the SyF electrode vanishes for the highest pulse voltages that were used due to the high temperature reached during write. As a result, during the cooling phase, the final state is reached through a spin-flop transition of the SyF storage layer

[en] Magnetic random access memories (MRAMs) are a new non-volatile memory technology trying establish itself as a mainstream technology. MRAM cell operation using a thermally assisted writing scheme (TA-MRAM) is described in this review as well as its main design challenges. This approach is compared to conventional MRAM, highlighting the improvements in write selectivity, power consumption and thermal stability. The TA-MRAM writing was tested and validated in the dynamic regime down to 500 ps write pulses. The heating process was investigated for the influence of the voltage pulse width, junction area and lead volume looking at the required write power density. The possibilities to control and reduce the write power density are described. The most promising solution to optimize the heating process and reduce the power consumption is to insert two thermal barrier layers at both ends of the MTJ layer stack, between the junction and the electrical leads, using low thermal conductivity materials. This minimizes the heating losses and improves the heating efficiency