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[en] An overview is presented of the effects of radiation in microelectronics technology. The approach taken throughout these notes is to review microscopic phenomena associated with radiation effects and to show how these lead to macroscopic effects in semiconductor devices and integrated circuits. Bipolar integrated circuits technology is reviewed in Appendix A. Appendix B gives present and future applications of radiation-tolerant microelectronics in nuclear power applications as well as the radiation tolerance requirements of these applications

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[en] This book describes radiation effects on and dose enhancement factors for electronic materials. Alteration of the electrical properties of solid-state devices and integrated circuits by impinging radiation is well-known. Such changes may cause an electronic subsystem to fail, thus there is currently great interest in devising methods for avoiding radiation-induced degradation. The development of radiation-hardened devices and circuits is an exciting approach to solving this problem for many applications, since it could minimize the need for shielding or other system hardening techniques. Part 1 describes the basic mechanisms of radiation effects on electronic materials, devices, and integrated circuits. Radiation effects in bulk silicon and in silicon devices are treated. Ionizing radiation effects in silicon dioxide films and silicon MOS devices are discussed. Single event phenomena are considered. Key literature references and a bibliography are provided. Part II provides tabulations of dose enhancement factors for electronic devices in x-ray and gamma-ray environments. The data are applicable to a wide range of semiconductor devices and selected types of capacitors. Radiation environments discussed find application in system design and in radiation test facilities

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