[en] A series of Al-doped amorphous silicon oxide films have been grown on p-type silicon (100) substrates by a dual ion beam cosputtering method. Visible electroluminescence (EL) from the devices, made by films with different contents of Al, can be seen with the naked eye under forward bias and reverse bias for films containing sufficient amounts of Al. The EL spectra are found to have a luminescence band peaked at 510 nm (2.4 eV), which is the same result as that obtained from silicon oxide films. With the increase in the amounts of Al, the peak position does not shift, the onset of the bias decreases, and the intensity of EL peak increases. Experiment results show that the doping of Al is beneficial to improving the conduction condition of films while the structure of the films associated with luminescence centers is affected hardly at all. [copyright] 2001 American Institute of Physics

[en] Silicon in steel significantly affects alloy growth kinetics in the coating in general galvanizing, thereby changing the coating microstructure from the usual stratified Fe-Zn alloy layers to a mass of ζ crystallites surrounding by liquid zinc. The Zn-Fe-Si phase diagram and the relevant thermodynamic information have great importance for the galvanizing industry in developing remedies for this problem. In this work, the available information on the Fe-Zn-Si system, including all three binary systems was reviewed and re-evaluated, and ternary parameters were extracted from the available experimental data. By assuming all the binary intermetallic phases with the exception of the δ, Γ₁, and Γ phases, have no ternary solubility, a thermodynamic calculation of the Fe-Zn-Si system was carried out, and relevant isothermal and isopleths sections were calculated. Its applicability in galvanizing industry was discussed. There is a good agreement between the calculated and the experimentally determined phase boundaries