[en] Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl₄ or VOCl₃ with ^tBuAsH₂. Using the vanadium precursor VCl₄, films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl₃ as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl₄, were silver in appearance. The films deposited using VOCl₃ demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl₄ or VOCl₃ and ^tBuAsH₂. • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl₃ had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities