[en] Conditions of epitaxial growth of vacuum condensates of bcc-lattice high-melting metals V, Ta, Mo, W, Nb on (1010), (1020), (0001) sapphire faces were determined. Temperature ranges in which origination, growth and epitaxial textures existend in films as well as conditions required for the formation of sufficiently perfect epitaxial films were determined

[en] The results are presented of an integrated X-ray-diffractometric and electronographic investigation into the effect of the substrate temperature, film thickness, and rate of condensation on the structure of molybdenum films condensed onto the surface of sapphire oriented with the plane (30.0). The molybdenum films have been obtained in a vacuum of (2-3)x10^-6 mm Hg by electron-beam heating of the initial material. It is noted that the substrate temperature in the course of condensation, and the film thickness exert the principal effect on the structure of Mo films. Sufficiently perfect epitaxial films of Mo of thickness d(>=)1 μ with orientation (211)long (30.0) α-Al₂O₃ may be obtained in the substrate temperature range of 1173-1223 K

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