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[en] Recently, the authors have carried out experiments on the transmutation doping of silicon by irradiation with 30-MeV protons. This paper describes a multifunctional unit used in the doping of silicon by irradiation with protons with energies of 8-80 MeV and a flux density of up to 5 x 1012 cm-2 sec-1, deuterons with energies of 15-70 MeV and a flux density of up to 5 x 1012 cm-2 sec-1, and fast neutrons generated in a beryllium target with a flux up to 1.2 1011 cm-2 sec-1
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