[en] We have computed the homogeneous barrier height (BH) of Au/n-Si Schottky diodes (SDs). Thereby, Au/n-Si/Au-Sb SDs (24 dots) have identically been prepared, and the effective BHs and ideality factors of these diodes have been calculated from their experimental forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. The BH for the Au/n-Si/Au-Sb diodes from the I-V characteristics varied from 0.789 to 0.819 eV, the ideality factor n varied from 1.051 to 1.179, and the BH from C^-2-V characteristics varied from 0.801 to 0.851 eV. The Gaussian fits of he experimental Schottky BH distributions obtained from the C^-2-V and I-V characteristics have yielded a mean BH values of 0.808 and 0.809 eV, respectively, that are in close agreement with value of about 0.805 eV predicted by metal-induced gap states (MIGS) and chemical electronegativity concepts for Au/n-Si SDs. Furthermore, the lateral homogeneous BH value of approximately 0.834 eV were also computed from the extrapolation of the linear plot of experimental BHs versus ideality factors

[en] We have prepared the Sn/n-Si Schottky barrier diodes (SBDs) with and without the native oxide layer. The diodes with or without the native oxide layer have been identically fabricated on the same Si wafer. The effective Schottky barrier heights (SBHs) and ideality factors of the SBDs have been obtained from the current-voltage (I-V) characteristics. Our purpose is experimentally to show whether or not the effective SBHs and ideality factors of the identically fabricated diodes differ from diode to diode. The SBH PHI_b for the Sn/n-Si SBDs without the interfacial oxide layer (the reference sample) has ranged from 0.670 to 0.599 eV, and ideality factor n from 1.349 to 2.558. PHI_b value for the Sn/n-Si SBDs with the interfacial oxide layer (metal-interfacial layer-semiconductor (MIS) sample) has ranged from 0.647 to 0.560 eV, and ideality factor n value from 1.381 to 2.777. Among identically prepared diodes, higher ideality factors have been found to accompany lower SBHs. Furthermore, the extrapolations of the linear plot the experimental barrier heights (BHs) versus ideality factors to the ideality factor have given the laterally homogeneous BHs of approximately 0.683 and 0.656 eV for the reference and MIS Sn/n-Si SBDs

[en] The current-voltage (I-V) characteristics of Au/Polypyrrole/p-Si/Al contacts have been measured at temperatures ranging from 70 to 280 K. The I-V characteristics of the device have rectifying behaviour with a potential formed at the interface. The high values of the ideality factor n depending on the sample temperature may be ascribed to a decrease of the exponentially increasing rate in current due to space-charge injection into the PPy thin film at higher forward bias voltage. The experimental reverse bias I-V characteristics of the device followed the Schottky-like conduction model or Poole-Frenkel effect formulae. A linear temperature dependence of the barrier height Φ_b from the reverse bias I-V characteristics was observed, and the Φ_bo value decreased with lowering temperature, ranging from 0.69 eV at 280 K to 0.22 eV at 70 K

[en] An Al/methyl violet (MV)/n-Si/AuSb Schottky structure was fabricated and its current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics were investigated at room temperature. A modified Norde's function combined with conventional forward I-V method was used to extract the parameters including barrier height (BH) and series resistance. The BH and series resistance obtained from Norde's function have been compared with those from Cheung functions, and it was seen that there is good agreement between the BH values from both methods. It was also seen that the values of capacitance are almost independent of frequency up to a certain value of frequency, whereas at high frequencies the capacitance decreased. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the n-Si that can follow the alternating current (ac) signal.

[en] A Schottky diode with configuration Au/Carmine/p-Si/Al has been fabricated and it has been seen that the thin film on the p-Si substrate has exhibited a good rectifying behavior. The current-voltage (I-V) characteristics of the device have been investigated in dark before electron irradiation and under white light illumination and after 12 MeV electron irradiation with fluency of 3x10¹² e^-/cm². It has been seen that the device is sensitive to illumination and to electron irradiation. The barrier height value has decreased under illumination. The ideality factor and series resistance values have increased by 12 MeV electron irradiation. Furthermore, it has also seen that the reverse bias current and capacitance of the device have decreased after electron irradiation. This has been attributed to decrease in net ionized dopant concentration with electron irradiation.

[en] We have studied electrical parameters of an Al/methyl violet/p-Si Schottky device by using current-voltage and capacitance-voltage-frequency measurements under γ irradiation at room temperature. Experimental results have shown that γ radiation gives rise to an increase in the barrier height, the ideality factor and the interfacial state density, while the series resistance decreases by applied radiation

[en] In this paper, we fabricated an Al/new fuchsin/p-Si organic-inorganic (OI) Schottky diode structure by direct evaporation of an organic compound solution on a p-Si semiconductor wafer. A direct optical band gap energy value of the new fuchsin organic film on a glass substrate was obtained as 1.95 eV. Current-voltage (I-V) and capacitance-voltage (C-V) measurements of the OI device were carried out at room temperature. From the I-V characteristics, it was seen that the Al/new fuchsin/p-Si contacts showed good rectifying behavior. An ideality factor value of 1.47 and a barrier height (BH) value of 0.75 eV for the Al/new fuchsin/p-Si contact were determined from the forward bias I-V characteristics. A barrier height value of 0.78 eV was obtained from the capacitance-voltage (C-V) characteristics. It has been seen that the BH value of 0.75 eV obtained for the Al/new fuchsin/p-Si contact is significantly larger than that of conventional Al/p-Si Schottky metal-semiconductor (MS) diodes. Thus, modification of the interfacial potential barrier for Al/p-Si diodes has been achieved using a thin interlayer of the new fuchsin organic semiconductor; this has been ascribed to the fact that the new fuchsin interlayer increases the effective barrier height because of the interface dipole induced by passivation of the organic layer

[en] In this research, we have investigated the electrical properties of metal-semiconductor (Sn/p-Si) Schottky barrier diodes (SBDs) under ⁶⁰Co gamma (γ)-rays. These devices is stressed with a zero-bias during ⁶⁰Co γ -ray source irradiation with the dose rate 2.12 kGy/h and total dose range was 0-500 kGy at room temperature. Electrical measurements of Sn/p-Si SBDs have been performed using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Experimental results show that gamma-irradiation induces an increase in the barrier height Φ _b(C-V) obtained from reverse-bias C-V measurements with increasing dose rate. However, the barrier height Φ _b(I-V) obtained from forward-bias I-V measurements remained almost constant. This negligible change of Φ _b(I-V) is attributed to the low barrier height in regions associated with the surface termination of dislocations. On the other hand, the values of the ideality factor obtained from I-V measurements increased with increasing dose rate. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface

[en] The electronic and interface state density distribution properties obtained from current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-type GaAs Schottky barrier diode (SBD) at room temperature was investigated. SBD parameters such as ideality factor (n), series resistance (R _S) and barrier height (Φ_IV ) were obtained from I-V and C-V measurements using Cheung's method. The diode parameters such as ideality factor, series resistance and barrier heights were found as 1.51-1.78, 7.597-8.167 Ω and 0.88-1.14 eV, respectively. The diode shows non-ideal I-V behaviour with an ideality factor greater than unity. Furthermore, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results show the presence of thin interfacial layer between the metal and semiconductor

[en] We prepared a methyl red/p-InP organic-inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl red organic film on a glass substrate was obtained as 2.0 eV. It was seen that the Al/methyl red/p-InP contacts showed a good rectifying behavior. An ideality factor of 2.02 and a barrier height (Φ_b) of 1.11 eV for the Al/methyl red/p-InP contact were determined from the forward bias I-V characteristics. It was seen that the value of 1.11 eV obtained for Φ_b for the Al/methyl red/p-InP contact was significantly larger than the value of 0.83 eV for conventional Al/p-InP Schottky diodes. Modification of the interfacial potential barrier for the Al/p-InP diode was achieved using a thin interlayer of the methyl red organic semiconductor. This ascribed to the fact that the methyl red interlayer increases the effective Φ_b by influencing the space charge region of InP