[en] The coefficient of controllability and tangent of the electrical losses angle of the Ba_xSr_1-xTiO₃ ferroelectric films are studied in dependence on the synthesis temperature by the high-frequency magnetron sputtering on the sapphire and polycore substrates. The structural studies showed that the films grown within the temperature range of 700 up to 900 deg C, contain (111), (110) and (100) orientation blocks. The quantitative ratio of phases depends on the synthesis temperature. The possibility of controlling the electrophysical properties by the films growth both on the monocrystalline and polycrystalline substrates is indicated

[en] The results of the studied on the electrophysical characteristics of the YBa₂Cu₃O_7-x high-temperature superconductor films, obtained through the method of the ion-plasma sputtering on the sapphire substrates, are presented. The dependences of the surface resistance and critical current density on the films thickness are established

[en] The results of the studies on the structural characteristics of the SrTiO₃, NdGaO₃ and CeO₂ buffer layers, obtained through the ion-plasma spraying on the silicon substrates, are presented. It is shown that the phase composition and internal stresses in the films are strongly dependent on the deposition temperature. The technological conditions of growth of primarily oriented SrTiO₃, NdGaO₃ and CeO₂ films are dortmund. The structural quality of the obtained buffer films is sufficient for further growth of the YBa₂Cu₃O_7-x high-quality films on the silicon substrates

[en] The certain oxide film growth on sapphire substrates is studied aimed to produce a buffer layer for high temperature superconducting films. In order for the Buffer layer to have mainly a (200) orientation to the substrate surface with minimal lattice distortions the method of high-frequency magnetron sputtering of ceramic CeO₂ target is applied. Using the method of X-ray diffraction analysis it is shown that structural perfection of the films is greatly dependent on the temperature of a substrate holder. The temperature of ∼ 870 deg C is stated to ensure the production of CeO₂ films with preferred orientation of (200), minimal lattice stresses and optimal crystallite size

[en] High-quality high-temperature superconducting films of YBa₂Cu₃O_1-x with the thickness up to 2.6 μ can be obtained by dc magnetron sputtering. It is revealed that CuO and YBa₂Cu₃O₈ inclusions coexist with a growing film and serve as sinks for defects, nonstoichiometric atoms and mechanical stresses. Methods of X-ray diffraction and Rutherford backscattering analyses are applied to state that under suggested process conditions the structural perfection of films increases with their thickness

[en] Investigation results are presented on properties of YBCO films up to 3.6. μm thick produced at deposition rate of 15 A/min in a DC planar magnetron system. Methods of X ray diffraction analysis, electron microscopy and Rutherford backscattering were used for structural and morphological studies of film surface. Optimal conditions of superconducting thick film manufacture are determined

[en] The model of deposition of thin multicomponent films by the ion-plasma sputtering of the amorphous and polycrystalline materials is developed. The values of the deposition rate, the variation by the thin film thickness of the high-temperature superconductors on the YBCO ceramics basis are calculated. The comparison of the modeling results with the experimental data indicated that the proposed model correctly describes the ion-plasma sputtering. The obtained results were applied as the basis for optimization of the thin films deposition process by the ion-plasma sputtering

[en] Possibility to produce YBa₂Cu₃O_7-δ high-temperature superconductor up to 2.6 μm thickness high-quality films via magnetron sputtering at direct current was shown. Inclusions containing CuO and YBa₂Cu₃O₈ were detected to coexist with a growing film and to be a drain for defects , nonstoichiometric atoms and mechanical stresses. By means of X-ray diffraction and the Rutherford backward scattering it was determined that under the proposed process condition the structure perfection of films was improved with thickness increase

[en] The thin ferroelectric films of the barium-strontium titanate compound (Ba_xSr_1-xTiO₃), grown on the substrates of the melted quartz (SiO₂), are studied through the method of the high-frequency magnetron spraying. The dependences of the reconstruction coefficient and dielectric losses level on the synthesis temperature and obtained films thickness are established and the comparable studies on the electrical properties of the obtained films relative to the films, grown on the substrates of the polycrystalline aluminium oxide (Al₂O₃) are also carried out

[en] The characteristics of a high-current impulse magnetron discharge have been studied during the reactive sputter deposition of Al in Ar/O₂ gas mixture. The dependence of deposition rate on oxygen content in the gas mixture has been measured for different power management regimes. The specific deposition rate values have been obtained for different ratios of on/off times