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AbstractAbstract
[en] The fraction and the distribution of the personal daily solar erythemal UV exposure were assessed for the shade provided by Australian gum trees in each of the four seasons to allow evaluation of the reduction in the personal UV exposure in tree shade over a year. The personal annual erythemal UV exposures in the tree shade ranged from 2510 SED (standard erythemal dose) for the vertical part of the ear to 8016 SED for the vertex of the head compared to 14,834 SED to a horizontal plane in full sun. The erythemal UV seasonal exposures for 15 min intervals on a horizontal plane in full sun in winter are comparable to the UV exposure to the vertex of the head in shade in autumn and spring. The UV exposure in the tree shade for summer, is approximately 20% less than the full sun exposure in autumn. The reduced personal annual erythemal UV exposures due to the tree shade provided reductions by a factor of 2 to 3 and 4 to 6 in the contribution to the risk of basal cell carcinomas and squamous cell carcinomas, respectively, compared to not employing the protection of the tree shade. (author)
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Country of input: Bulgaria
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[en] Recent experience has shown that certain metal alloys can be put into glass form by rapid melt-quenching or by various condensation processes. Models for the nature and structure of these glasses are surveyed and shown to be quite parallel to those already developed for the more common nonmetallic glasses. The rather unique magnetic, superconducting, and mechanical properties and the technical potential of metallic glasses are also discussed
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Science; v. 199(4324); p. 11-21
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AbstractAbstract
[en] The mutabilities of normal and xeroderma pigmentosum variant (XP4BE) human fibroblasts by ultraviolet light (UV) were compared under conditions of maximum expression of the 6-thioguanine resistance (TGsup(r)) phenotype. Selection was with 20 μg TG/ml on populations reseeded at various times after irradiation. Approx. 6-12 days (4-8 population doublings), depending on the UV dose, were necessary for complete expression. The induced mutation frequencies were linear functions of the UV dose but the slope of the line for normal cells extrapolated to zero induced mutants at 3 J/m2. The postreplication repair-defective XP4BE cells showed a higher frequency of TGsup(r) colonies than normal fibroblasts when compared at equal UV doses or at equitoxic treatments. The induced frequency of TGsup(r) colonies was not a linear function of the logarithm of survival for either cell type. Instead, the initial slope decreased to a constant slope for survivals less than about 50%. The doses and induced mutation frequencies corresponding to 37% survival of cloning abilities were 6.7 J/m2 and 6.2 X 10-5, respectively, for normal cells and 3.75 J/m2 and 17.3 X 10-5 for the XP4BE cells. The lack of an observable increase in the mutant frequency for normal fibroblasts exposed to slightly lethal UV doses suggests that normal postreplication repair of UV-induced lesions is error-free (or nearly so) until a threshold dose is exceeded. (Auth.)
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Mutation Research; ISSN 0027-5107; ; v. 62(2); p. 341-353
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[en] Recent experience has shown that certain metal alloys can be put into glass form by rapid melt-quenching or by various condensation processes. Models for the nature and structure of these glasses are surveyed and shown to be quite parallel to those already developed for the more common nonmetallic glasses. The rather unique magnetic, superconducting, and mechanical properties and the technical potential of metallic glasses are also discussed
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Science; v. 199(4324); p. 11-21
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Nygren, E.; Turnbull, D.; Jacobson, D.C.; Aziz, M.J.; Poate, J.M.; Hull, R.
Solid State Division progress report for period ending September 30, 19841985
Solid State Division progress report for period ending September 30, 19841985
AbstractAbstract
[en] Measurements of the pressure dependence of the diffusivity of arsenic in Si are being made. The results are expected to have a direct bearing on whether the primary point defects involved in this process are vacancies or interstitials. Wafers of (100) Si have been implanted with 5 x 1015 As/cm2 at 100 keV and are first annealed by standard rapid thermal annealing techniques to 11000C to restore crystallinity by solid phase epitaxy. Subsequent anneals were done either under pressure in a Boyd-England-type piston-cylinder press or in evacuated ampules in a furnace. The arsenic depth distribution before and after treatment has been examined by RBS techniques. To data the authors have investigated the arsenic diffusivity over the temperature range 850-9500C at pressures of 0, 20, and 30 kilobars. Preliminary analyses of the results are discussed
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Green, P.H.; Watson, D.M. (eds.); Oak Ridge National Lab., TN (USA); p. 70-71; Mar 1985; p. 70-71; Available from NTIS, PC A13/MF A01 as DE85008766
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AbstractAbstract
[en] A modified solid-state precipitation process for the formation of stoichiometric A-15 V3Ga is presented which results in high values of T/sub c/=15.0 K and H/sub c2/(4.2)=22 T, excellent phase homogeneity, and a high critical current J/sub c/(4.2 K)=3 x 105--6 x 104 A/cm2 over the field range 0--18 T. We find that grain boundary pinning is dominant, producing a very high specific pinning force Q/sup max/=6.4 x 104 dyn/cm2. The nonparamagnetically limited H/sub c2/ is needed to explain our high flux-pinning results
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AbstractAbstract
[en] The temperature dependence of lineshape parameters obtained from Doppler profile measurements (from 7 to 350 K) is presented for rolled and unrolled Pb, Pb(Cd), and Pb(Tl) alloys. It is demonstrated that positrons can be used to detect microporosity and dislocations in Pb(Cd) alloys. The porosity is greatly reduced by rolling. Positron trapping by the Pb(Cd) alloys in the as-worked state is attributable to dislocations. (author)
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Solid State Communications; ISSN 0038-1098; ; v. 31(2); p. 65-68
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[en] Critical current behavior and intrinsic superconducting properties of liquid quenched Nb3Al and its pseudobinaries Nb3 (Al,Si) and Nb3(Al,Ge) have been studied in fields up to 29 T. Our results show that flux pinning in these materials is dominated by strong precipitate pinning at low temperatures and by grain boundary pinning at high (>10 K) temperatures. The best results were obtained in Nb75Al19Ge6 samples with T/sub c/ of 20.0 K, estimated H/sub c/2(0) of 43 T and J/sub c/ (4.2 K) in excess of 104 A/cm2 at 30 T
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Numerical Data
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AbstractAbstract
[en] We have measured the effects of pressure, temperature, and some variations in impurity content on the growth rate u of quartz into fused silica. Under all conditions the growth rate was interface controlled and increased exponentially with pressure with an activation volume averaging -21.2 cm3/mole. The activation enthalpy for all specimens extrapolated to a zero pressure value of 64 kcal/mole, within the experimental uncertainty. At a given stoichiometry the effect of hydroxyl content on growth rate is described entirely by a linear term C/sub OH/ in the prefactor of the equation for the growth rate. The effect of chlorine impurity can be described similarly. Also u is increased as the ideal stoichiometry is approached from the partially reduced state
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Journal of Applied Physics; ISSN 0021-8979; ; v. 51(9); p. 4718-4728
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[en] Critical current densities of over 1.8 x 106 A/cm2 at 4.2 degreeK and 150 kG have been achieved in Nb3Al tapes rapidly quenched from the liquid state at rates of 105--106 degreeC/sec. The superconducting transition temperature is about 16 degreeK, indicating a relatively high degree of order, and increases to 18.4 degreeK upon annealing at 750 degreeC. The observed microstructure depends sensitively on the quenching rate and consists of small submicron grains surrounded by a thin boundary layer of different composition. The grain size is roughly inversely proportional to the temperature gradient during quenching. The quoted critical current densities, the highest observed to date in any superconductor, should be regarded as a lower limit of the material critical value imposed by the heating problems due to the contact resistance
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Journal of Applied Physics; v. 48(6); p. 2597-2600
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