[en] A project aimed at measuring the neutron electromagnetic form factor in the reaction e⁺e^-→ nn-bar with the SND detector at the VEPP-2000 e⁺e^- collider is presented. The results obtained for the time resolution of the NaI(Tl) counter using flash-ADC are reported along with estimates of the efficiency of separation of neutron-antineutron events.

[en] The spherical neutral detector (SND) takes data at the e+e- collider VEPP-2000 in Novosibirsk. We present here recent upgrades of the SND DAQ system which are mainly aimed to handle the enhanced events rate load after the collider modernization. To maintain acceptable events selection quality the electronics throughput and computational power should be increased. These goals are achieved with the new fast digitizing electronics and distributed data taking. The data flow for the most congested detector subsystems is distributed and processed separately. We describe the new distributed SND DAQ software architecture, its computational and network infrastructure. (paper)

[en] The data acquisition (DAQ) system of the SND detector successfully operated during four data-taking seasons (2010–2013) at the e⁺e⁻ collider VEPP-2000. Currently the collider is shut down for planned reconstruction, which is expected to increase the VEPP-2000 luminosity and data flow from the SND detector electronics by up to 10 times. Since current DAQ system implementation (electronics and computer part) does not have enough reserve for selection of events in the new environment without compromising quality, there arose the need for the system upgrade. Here we report on the major SND data acquisition system upgrade which includes developing new electronics for digitization and data transfer, complete redesign of the data network, increasing of the DAQ computer farm processing capacity and making the event building process concurrent. These measures will allow us to collect data flow from the most congested detector subsystems in parallel in contrast to the current situation. We would like to discuss also the possibility to implement full software trigger solution in the future

[en] The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and (In, Fe)Sb/p-GaAs structures are analyzed. The band diagrams of heterojunctions are constructed. It is shown that the investigated structures have the same current transfer mechanism as in the structures with a Schottky barrier.

[en] A new EMC electronics channel, including FADC is proposed for the SND detector, taking data at e⁺e⁻ collider VEPP-2000. This system is intended to obtain better identification of slow anti-neutrons, produced in e⁺e⁻→ n anti-n reaction. The proposed channel provides time resolution of about 1 ns

[en] A new measuring electronics channel with FADC is proposed for the electromagnetic calorimeter of the SND detector, taking data at e"+e"− collider VEPP-2000. This system is intended to raise detection efficiency of the low-speed anti-neutrons, produced in e"+e"−→n anti-n reaction. The proposed channel provides time resolution of about 1 ns

[en] Epitaxial InFeSb/GaAs heterostructures were obtained by laser deposition in vacuum. Investigations by high-resolution transmission electron microscopy and microdiffraction showed that the InFeSb layers are single-crystal and do not contain additional phase inclusions. Study of their magnetotransport properties have revealed that an anomalous Hall effect and a negative magnetoresistance up to room temperature are observed in the structures.

[en] We project the performance of the ATLAS liquid argon endcap and forward calorimeters at the planned high luminosity LHC option HL-LHC by exposing small calorimeter modules of the electromagnetic, hadronic, and forward calorimeters to high intensity beams at IHEP/Protvino. The beam intensity extends well beyond the maximum expected for these calorimeters at HL-LHC. The signal reconstruction and calorimeter performance have been studied in full detail.

[en] On the basis of a comprehensive study of the structural and electronic properties of InAs/GaAs quantum dots grown by vapor-phase epitaxy at atmospheric pressure, a structural model of the quantum dots as three truncated pyramids adjoined at their bases is chosen. The model takes into account the diffusive smearing of the composition near the base and lateral surface as well as the segregation of indium near the vertex. It is established that the wave functions of charge carriers in the ground state are localized in a comparatively small region of the quantum dot near its vertex.

[en] The effect of technological parameters on the selective manganese doping of arsenide–gallium heterostructures fabricated by a combination of methods of MOS-hydride epitaxy and pulsed-laser deposition is investigated. As these parameters, the impurity content in the manganese δ layer and the structureformation temperature are used. It is established that the prepared structures demonstrate the highest electrical activity and have ferromagnetic properties at a growth temperature of ~400°C and an impurity content of no higher than 0.2–0.3 monolayers. Studying the grown structures by the methods of reflection spectroscopy, high-resolution transmission electron microscopy, and secondary-ion mass spectrometry shows that use of the above conditions in the case of pulsed laser deposition makes it possible to obtain arsenide–gallium structures, which have good crystalline quality, and manganese is concentrated in them within a thin (7–8 nm) layer without substantial diffusion-induced spreading and segregation.