No abstract available

No abstract available

[en] Regularities in the displacement of atoms from the ideal position was studied for InSb and InP semiconductor compounds. It was found that the mean-square displacement of metal atoms was bigger than that of non-metals. The derived statistical model of the structure corresponded to the up-to-date notion of interatomic forces. It was supposed that a slight change in the configuration of bonds was caused by a gradual change of valent state with increase in temperature

[en] With the use of polarized light the photoconductivity (PC) in the monocrystalline samples of n-AgInS₂ in the orthorhombic structures at 300 and 77 K has been measured in the spectral range 0.8-4.0 eV. The anisotropy in the PC spectrum is observed near the fundamental absorption edge. The structures observed are discussed on the basis of the band structure and selection rUles for the optical transitions in the orthorhombic AgInS₂ crystals. The lowest band gaps at 300 K in the orthorhombic phases are 1.97 eV. The PC anisotropy is determined by the Dsub(2h)sup(25) symmetry of the orthorhombic lattice and is in agreement With the band structure of this phase. The results obtained indicate the possibilities of the use of AgInS₂ crystals as linearly polarized light photoelectric analyzers

[en] Microtwin structure of crystal specimens is determined using diffractometric studies. Parameters of structures are determined. Tendency to the ordering in placing of metal atoms according to the type of famatinite is found. Conclusion is made, that dynamics, temperature variations of interatomic interactions where specific nature of interaction in multicomponent systems result in occurrence of domain chains in the studied crystals, as well

No abstract available

[en] tetragonal symmetry with pronounced stratification in (001) and n-type conductiv ity with electron concentration of about 10²¹ cm^-3 (resistivity of 1.6-7 x10^-3 Ohmxcm at 300 K). It is shown that the temperature dependence of specific resistivity in the 4.2-500 K range is of the semiconductor character

[en] Recombination radiation and photoconductivity of single crystals of rhombic and chalcopyritic phases of AgInS₂ have been studied. It is shown that recombination radiation permits to record phase transition procedure. It is shown that crystals of both phases have high photosensitivity and efficiency of recombination radiation comparable with their binary analogues (CdS and CdSe). Radiation recombination of rhombic and chalcopyritic phases has an exiton nature and is observed up to 300 K

[en] The epitaxial layer sample of the Ga_0.82In_0.18As solid solution is studied. The arsenic atoms coordination is determined on the basis of the X-ray diffractometer measurements in its structure. The ratio of the As atoms in the coordination 4Ga, 3Ga + In and 2Ga + 2In corresponds to the superstructure wherein the In atoms chain extended in the [110] direction alternates with four Ga chains. The Ga₄InAs₅ is an ideal composition for such a superstructure. New peculiarities of the domain structure originating due to the temperature change in the tetrahedral bends configuration are detected

[en] The structures of monocrystals of CuIn₃Se₅ and CuIn₅Se₈ ternary compounds have been studied by X-ray diffraction for the first time. The lattice parameters of CuIn₃Se₅ and CuIn₅Se₈ crystals are determined. It is established that CuIn₃Se₅ has a thiogallate lattice with c = 2a, which leads to the domain structure formation. CuIn₅Se₈ has a hexagonal lattice and exhibits cleavage along the (001) plane. The interrelation between the atomic composition and crystal structure of these new ternary semiconductor compounds is discussed