[en] A structure exposed to electromagnetic radiation is described, comprising: a metal surface and a plurality of discrete elements, each element including an insulating substrate and a high-temperature superconducting material substantially covering a face of said substrate, a portion of said metal surface being substantially covered with said elements with said superconducting material thereof adjacent to and in electrical contact with said metal surface, thereby reducing ohmic losses on exposure of said structure to said electromagnetic radiation

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[en] An extensive review of the present and future uses of superconducting devices is presented. The topics covered include (1) research applications (magnets, microwave cavities, detectors and mixers, sensitive instrumentation, and gravimeters); (2) electrical standards (voltage, current, rf power and attenuation, temperature, and frequency); (3) rf signal processing and transmission (coaxial transmission lines, resonators, oscillators, miscellaneous circuit elements, amplifiers, millimeter-wave mixing, and extremely-low-frequency detection); (4) computer components and systems (nontunneling elements, tunneling cryotron, and shift register); (5) energy conversion and power transmission (MHD power generation, controlled thermonuclear fusion, energy storage, motors and generators, power transmission); (6) transportation; and (7) miscellaneous (medical instrumentation, water-pollution control, and prospecting)

[en] 1250A-thick silicon-barrier Josephson junctions were made and tested. The junctions tested show supercurrent and have junction characteristics which may be useful for high-frequency applications. A detailed junction fabrication process and the effects of surface oxides on the junction characteristics are described

[en] The use of Josephson devices as switching components for computer circuits was investigated including a study of the switching properties of the superconductor-semiconductor-superconductor junction. The switching speeds of a single junction and a basic memory cell computed by numerical methods are comparable with the corresponding values for oxide-barrier junctions. Having a much lower Q than the conventional oxide-barrier junction, the junction should not show the previously experienced difficulties caused by junction resonances. The damping of plasma oscillations in the semiconductor junction is also more effective, leading to a shorter switching time. A new type of logic gate employing Josephson devices was investigated. This circuit would automatically unlatch after each operation, thus requiring no external means for resetting. Numerical analysis predicts subnanosecond switch-reset operation for appropriate parameter choices. The qualitative behavior of the circuit was also shown with a mechanical analog

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