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[en] This study shows that it is possible to increase in vivo the efficiency of irradiation by the transfer of the wild-type gene p53 in a model of transferred human carcinoma for this gene, and emphasizes the importance of the therapeutic sequence in the observed effect. (N.C.)

[en] The variation of the introduction rate of defects with the energy of the electrons in n-type silicon irradiated at room temperature was studied. The results obtained provide a direct confirmation of the identification of the observed defects which was proposed in the literature: the Esub(c)-0.39 and Esub(c)-0.23eV levels, attributed to the divacancy are found to have a threshold whose value is two times the threshold energy (25 eV) for vacancy-type defects (the Esub(c)-0.43 eV level). The Esub(c)-0.33 eV which is not yet identified should correspond to a vacancy-type defect since its threshold energy is 25 eV