[en] The effect of irradiation temperature for high-energy electrons on defect formation in a near-to-surface silicon layer of Si-SiO₂ structures is studied. The structures are prepared by KEhF-7.5 silicon oxidation in dry oxygen, and they are irradiated with electrons at the 1x10¹⁴ cm^-2 dose in the 20-500 deg C temperature range. The donor concentration in the near-to-surface silicon layer is determined according to the minimum capacity of the high-frequency C-V characteristics of the MOS structures. Irradiation at 20 deg C causes a donor concentration growth in the near-to-surface silicon layer, and at 500 deg C - its decrease in comparison with the value for the initial structure. On the basis of the experimental data the mechanism of the donor concentration veriation with the irradiation temperature, according to which interstitial silicon atoms, generated during irradiation cause formation of defect complexes having donor properties, while increasing temperature their reconstruction proceeds in such a way that the role of complexes with donor properties decreases

[en] The effect of irradiation of Si-SiO₂ structures with high-energy electrons in the 20 to 400 ⁰C temperature range on the charge accumulation in these structures is investigated. The change of the charge in SiO₂ is calculated from high-frequency C-U characteristics. The experimental data suggest the generation of neutral traps for electrons in SiO₂ in the course of irradiation of SiO₂ at elevated temperatures (200 to 400 ⁰C). At further irradiation of the structures at room temperature the electrons and holes are simultaneously captured on both, radiation-generated and native traps, which leads, owing to the spatial separation of the traps, to increasing charge fluctuations in SiO₂. (author)

[en] The spatial homogeneity of electrical characteristics in SiO₂-Si structures irradiated with fast electrons with a dose up to 10¹⁵ cm^-2 is studied with a scanning mercury probe technique. It is shown that irradiation does not disturb the homogeneity of oxide film and interface, and in cases of structures having nonuniformly doped substrates it does not change the shape and the value of these homogeneities. At irradiation of the samples with charge distribution in oxide film fluctuating across the area, the amplitude of these fluctuations decreases proportionally to the growth in the mean value of the charge, the dependence on the irradiation dose being exponential. (author)

[en] The Soviet analysts' major advances in both theory and application of X-ray fluorescence (XRF) analysis are reviewed. The focus is on issues concerning XRF analysis of heterogeneous samples, a theoretical account of interelement effects, and employment of scattered radiation as the internal standard. (orig.)