AbstractAbstract
[en] To place β-FeSi2 as a 3rd generation Kankyo (Environmentally Friendly) Semiconductor after GaAs, one should demonstrate its superior features by fabricating practical devices. One has to prepare high-quality β-FeSi2 films with (1) precisely controlled Fe/Si ratio (1:2), (2) flat and cracks-free surface, (3) pinhole-free surface and interfaces, (4) flat interfaces, (5) well-controlled electron or hole concentration with residual carrier concentration as low as ∼10 16 cm-3. One should accordingly explore novel thin film manufacturing technologies by considering specific properties of constituent Fe and Si atoms. Conventional growth methods used for III-V and II-VI compound semiconductor films are not suited for β-FeSi2. Here we summarize the current status of film preparation technologies and describe their advantages and drawbacks. To explore the possibility of β-FeSi2 for low cost and high conversion efficiency solar cells, high quality β-FeSi2 films have been formed on Si substrates by molecular beam epitaxy (MBE) and sputtering methods. The critical feature about the device structure is an optimized thin β-FeSi2 template buffer layer on Si(111) substrate. The template served as a substrate for epitaxial growth of single crystal β-FeSi2 film and restrains the Fe diffusion into Si at β-FeSi2/Si interface. For n-β-FeSi2/p-Si structure under air mass 1.5, an energy conversion efficiency of 3.7% was obtained, showing that β-FeSi2 is practically a promising semiconductor for making solar cells
Primary Subject
Source
8. IUMRS international course on advanced materials symposium on semiconducting silicides: Science and future technology; Yokohama (Japan); 8-13 Oct 2003; S0040609004003025; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Literature Type
Conference
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
External URLExternal URL
AbstractAbstract
[en] Published in summary form only
Primary Subject
Source
Nuclear physics spring meeting of the Deutsche Physikalische Gesellschaft e.V. (DPG); Fruehjahrstagung des Fachausschusses Physik der Hadronen und Kerne der Deutschen Physikalischen Gesellschaft e.V. (DPG); Strasbourg (France); 26-30 Mar 1990
Record Type
Journal Article
Literature Type
Conference
Journal
Verhandlungen der Deutschen Physikalischen Gesellschaft; ISSN 0420-0195; ; CODEN VDPEA; v. 25(5); p. 1389
Country of publication
BARYONS, BETA DECAY RADIOISOTOPES, BETA-MINUS DECAY RADIOISOTOPES, DAYS LIVING RADIOISOTOPES, ELECTRON CAPTURE RADIOISOTOPES, ELEMENTARY PARTICLES, EVEN-ODD NUCLEI, FERMIONS, HADRONS, HEAVY NUCLEI, ISOMERIC TRANSITION ISOTOPES, ISOTOPES, MATHEMATICAL MODELS, MINUTES LIVING RADIOISOTOPES, NUCLEI, NUCLEONS, ODD-ODD NUCLEI, QUANTITY RATIO, RADIOISOTOPES, RHENIUM ISOTOPES, STAR EVOLUTION, SYNTHESIS, TUNGSTEN ISOTOPES, YEARS LIVING RADIOISOTOPES
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue