[en] A megawatt-level subterahertz surface wave oscillator (SWO) is proposed to obtain high conversion efficiency by using separated overmoded slow wave structures (SWSs). Aiming at the repetitive operation and practical applications, the device driven by electron beam with modest energy and current is theoretically analyzed and verified. Then, the functions of the two SWS sections and the effect of the drift tube are investigated by using a particle-in-cell code to reveal how the proposed device achieves high efficiency. The mode analysis of the beam-wave interaction region in the device is also carried out, and the results indicate that multi-modes participate in the premodulation of the electron beam in the first SWS section, while the TM₀₁ mode surface wave is successfully and dominantly excited and amplified in the second SWS section. Finally, a typical simulation result demonstrates that at a beam energy of 313 keV, beam current of 1.13 kA, and guiding magnetic field of above 3.5 T, a high-power subterahertz wave is obtained with an output power of about 70 MW at frequency 146.3 GHz, corresponding to the conversion efficiency of 20%. Compared with the results of the previous subterahertz overmoded SWOs with integral SWS and similar beam parameters, the efficiency increases almost 50% in the proposed device. (paper)

[en] By investigating the interaction of an n-type silicon sample with the TM_0_1 mode millimeter wave in a circular waveguide, a viable high-power TM_0_1 millimeter wave sensor is proposed. Based on the hot electron effect, the silicon sample serving as a sensing element (SE) and appropriately mounted on the inner wall of the circular waveguide is devoted to the on-line measurement of a high-power millimeter wave pulse. A three-dimensional parallel finite-difference time-domain method is applied to simulate the wave propagation within the measuring structure. The transverse electric field distribution, the dependences of the frequency response of the voltage standing-wave ratio (VSWR) in the circular waveguide, and the average electric field amplitude within the SE on the electrophysical parameters of the SE are calculated and analyzed in the frequency range of 300–400 GHz. As a result, the optimal dimensions and specific resistance of the SE are obtained, which provide a VSWR of no more than 2.0, a relative sensitivity around 0.0046 kW"−"1 fluctuating within ± 17.3%, and a maximum enduring power of about 4.3 MW. (paper)

[en] Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3–0.4 THz band is investigated. The distribution of electromagnetic field components, voltage standing wave ratio (VSWR), and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain (FDTD) method. By adjusting several factors (such as the length, width, height and specific resistance of the silicon block) a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW⁻¹, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3–0.4 THz band. (interdisciplinary physics and related areas of science and technology)

[en] To develop a high-power continuous-wave terahertz source, a Clinotron operating at 0.3 THz is investigated. Based on the analyses of field distribution and coupling impedance, the dispersion characteristic of a rectangular resonator is preliminarily studied. The effective way to select fundamental mode to interact with the electron beam is especially studied. Finally, the structure is optimized by particle-in-cell simulation, and the problems of manufacture tolerance, current density threshold, and heat dissipation during Clinotron’s operation are also discussed. The optimum device can work with a good performance under the conditions of 8 kV and 60 mA. With the generation of signal frequency at 315.89 GHz and output power at 12 W on average, this device shows great prospects in the application of terahertz waves. (paper)