[en] We report on the annealing behaviour of GaN grown on sapphire after implantation of ¹¹⁷Cd(¹¹⁷In). Isochronic annealing has been performed in order to remove the implantation-induced lattice damage in evacuated quartz ampoules with additional Al. The extent of the lattice damage is investigated with perturbed γγ-angular correlation spectroscopy (PAC). The implantation damage is annealed at temperatures above 1073 K to a large extent. 82(5)% of the probes are found on the Ga-site characterized by a quadrupole coupling constant of 20.9(1) MHz. After H loading, an additional interaction appears which is attributed to ¹¹⁷Cd(¹¹⁷In)-H pairs

[en] We present a slab-line waveguide whose geometry is optimized for wide-angle x-ray diffraction (XRD) experiments on protein crystals during irradiation with intense microwave fields. Characterization of the waveguide transmission and reflectivity (using time-domain reflectometry) and of the electric field distribution inside the waveguide (using finite-difference time-domain calculations) shows that the present device has a broad bandwidth from below 0.5 to 18 GHz, allowing one to perform frequency-dependent XRD studies with a well-defined transverse mode structure and negligible reflection losses. As shown with a specific example, our device provides a simple way to couple microwave irradiation experiments with high-resolution x-ray diffraction measurements from millimeter-size crystalline samples. The present design might prove useful for systematic studies of microwave effects on protein structure and dynamics

[en] The interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex formation between substitutional donors (As, P) and different radioactive acceptors (¹¹¹In, ¹¹¹Cd, ¹¹⁷Cd) has been observed. The formation of Cd-hydrogen pairs using either ¹¹¹Cd or ¹¹⁷Cd is discussed for GaAs, InP, and InAs