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Friedrich, D.; Bernt, H.; Huber, H.L.; Windbracke, W.; Zwicker, G.
Electron-beam, x-ray, and ion-beam technology1989
Electron-beam, x-ray, and ion-beam technology1989
AbstractAbstract
[en] This paper describes the performance of X-ray exposure and the resist system with regard to mask pattern placement accuracy, overlay and linewidth control. A total overlay of about 130 nm (1σ) in x and y direction and overall linewidth variation of 23 nm (1σ) within a 4 inch wafer on etched poly-Si structures have been achieved. Electrical results of 0.5 μm N-MOS transistors with long channel behavior up to 3.5 V supply voltage are shown
Source
Yanof, A.W; 389 p; 1989; p. 202-209; Society of Photo-Optical Instrumentation Engineers; Bellingham, WA (USA); 8. electron-beam, x-ray, and ion-beam technology: submicrometer lithographies; San Jose, CA (USA); 1-3 Mar 1989; CONF-8903184--; Society of Photo-Optical Instrumentation Engineers, 1022 19 St., P.O. Box 10, Bellingham, WA 98227 (USA)
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