[en] Nominally undoped and N-doped ZnO thin films were grown by plasma-assisted metalorganic chemical vapour deposition. P-type conductivity was confirmed by Hall-effect measurements, not only in the N-doped but also in the nominally undoped ZnO. The zinc vacancy and extrinsic nitrogen acceptor states were identified by low-temperature photoluminescence, with the energy level located at 270 meV and 180 meV above the valence-band maximum, respectively. An evident increment in the oxygen as well as nitrogen concentration in the p-type ZnO : N layer was well confirmed by secondary ion mass spectroscopy

[en] The authors develop a plasma-free metalorganic chemical vapour deposition method to grow N-doped p-type ZnO films. The incorporation of the N acceptor and the corresponding change in the Fermi level are well confirmed by x-ray photoelectron spectroscopy. Temperature-dependent photoluminescence reveals the acceptor-related emissions, namely, neutral acceptor-bound exciton and probably donor-acceptor pair transition. In addition, typical rectifying I-V characteristics and room-temperature electroluminescence from ZnO homojunction light-emitting diodes are demonstrated

[en] Continuous-wave laser properties of Nd : GYSGG crystal based on the transition from ⁴F_3/2 to ⁴I_13/2 are investigated. With different output couplers, single or multiple wavelength lasers operating at 1321, 1336, 1404 and 1424 nm are obtained, which provide new options in these wavelength bands. In the 1.3 µm region, the maximum output power is 2.5 W, corresponding to the conversion efficiency of 18.5%. In the 1.4 µm region, the maximum output power at 1424 nm is 707 mW, corresponding to the conversion efficiency of 6.8%. The output power and conversion efficiency can be improved with better anti-reflection coatings for the laser crystal. (paper)

[en] We report in-situ atomic-scale investigation of void evolution, including growth, coalescence and shrinkage, under electron irradiation. With increasing irradiation dose, the total volume of voids increased linearly, while nucleation rate of new voids decreased slightly, and the total number of voids decreased. Some voids continued to grow while others shrank to disappear, depending on the nature of their interactions with nearby self-interstitial loops. For the first time, surface diffusion of adatoms was observed largely responsible for the void coalescence and thickening. These findings provide fundamental understanding to help with the design and modeling of irradiation-resistant materials.