[en] The mobile ion area density of MOS capacitors, before and after irradiation with different doses and bias, has been examined using the triangular voltage sweep technique. It is found that after irradiation the mobile ion area density is reduced for MOS capacitors oxidized both with dry oxygen and TCE and with dry oxygen only. The reductions of the density are compared among the samples under irradiation but with positive, negative and zero bias respectively. At zero bias the density steadily decreases with the increasing of irradiation dose, but at positive bias it is nearly invariable when dose is increased to over 1 x 10³ Gy(Si). Small increment of the density is found when increasing the times of TVS measruement at high temperature. The experimental results are qualitatively explained

[en] Proton radiation responses of Si gate P and N channel fluorinated MOSFETs processed with H₂ + O₂ and dry O₂ gate oxidation have been investigated. The data on threshold voltage and I_ds-V_gs characteristics show that the radiation-induced oxide charges and interface states can be restrained. The formation of Si-F bonds to substitute some weak bonds and strained bonds which easily become charge traps under irradiation and the relaxation of the Si/SiO₂ interface stress by F atoms are considered to explain the experimental result

[en] The ⁶⁰Co γ radiation responses of PMOSFET with dry oxidized gate dielectrics containing HCl have been investigated by the sub-threshold measurement technique. It is shown that the use of a minute amount of HCl can bring about a dramatic improvement in the radiation induced threshold voltage shifts and interface states generation. The optimum HCl introducing time is 10-150 seconds when HCl flux keeps constant (15 ml/min). An excessive amount of HCl will cause the hardness to degrade. This result is explained in terms of the positive and negative effects of HCl in SiO₂ dielectrics

[en] High speed CMOS circuits 54HC04 were subjected to irradiations with the same total dose of 1 x 10⁴ Gy(Si) but at two different dose rates, and annealing measurements were performed at room temperature. The variance of both damage mechanism and failure mode for different dose rates was analysed, and the influence of dose rate on the reliability of high speed CMOS circuits in radiation environments was discussed

[en] The dependences of the flatband voltage shift (ΔV_FB) and the threshold voltage shift (ΔV_TH) in MOS system on the oxide thickness (T_ox) and on total irradiated dose (D) of electron-beam and ⁶⁰Co γ-ray have been studied. It has been found that ΔV_FB ∝ T_ox³, with +10V of gate bias during irradiation for n-Si substrate MOS capacitors; ΔV_TH ∝ T_ox³D^2/3, with 'on' gate bias during irradiation for n- and P-channel MOS transistors; ΔV_TP ∝ T_ox²D^2/3, with 'off' gate bias during irradiation for P-channel MOS transistors. These results are explained by Viswanathan model. According to ∼T_ox³ dependence, the optimization of radiation hardening process for MOS system is also simply discussed

[en] The author has investigated the irradiation response of the stacked structure of pMOS radiation sensitive field effect transistors which susceptibility is obviously higher than that of single pMOSFET. The differences of response sensitivity, linearity and stability are compared between two stacked modes: Single substrate and individual substrate. As well as between two bias during irradiation; 0V and read-out bias (constant source inject). The results show that stacked structure with single substrate have higher sensitivity than that with individual substrate, and the response under read-out bias has high sensitivity, linearity and stability. The re-use of pMOS dosimeter with stacked structure also has been studied. It is found that the sensitivity and linearity of the response of second radiation are higher than that of first radiation

[en] Response of PMOS dosimeter to total dose has been studied under ionizing radiation with ⁶⁰Co γ-rays. The results showed that there was an obvious dependence of ΔV_T on dose rate. By means of I-V subthreshold curve measurement the contribution of irradiation induced interface state positive charge to the dose rate effects was found and the relationship of total threshold voltage shift ΔV_T and dose was KDⁿ. The power n decreased with increasing dose rate

[en] Radiation effects of ⁶⁰Co γ ray and 4,7 and 30 MeV protons on LF 7650 CMOS operational amplifier were investigated. The damage mechanism of LF7650 was discussed. It is indicated that the mobility reduction of major carrier caused by ionizing and displacement damage is the chief mechanism causing the failure of CMOS operational amplifier irradiated by protons, and that is why the degradation of LF 7650 caused by protons is much more serious than that caused by ⁶⁰Co γ ray. In addition, a comparison of proton radiation effects on CMOS operational amplifier and MOSFET showed a significant difference in mechanism

[en] The time parameters' responses of high speed CMOS 54HC devices to total dose radiation have been investigated and its degeneration mechanism has been analyzed, which shall be proved very valuable

[en] By making ionizing radiation experiment on SOS/CMOS 4082, we have analysed the principal mechanism of leakage current induced by irradiation. The worst bias condition of SOS-CMOS devices during irradiation is discussed as well