[en] The available data on tellurium compounds with d-transition metals are considered and generalized. The phase diagrams and crystal structures of different phases known at present are given. The methods of preparation of tellurides in poly- and monocrystals forms and their chemico-analytical characteristics are described. Brief information about electrophysical properties are given. Promising and existing fields of application are shown. 262 refs.; 39 figs.; 23 tabs

[en] Information about tellurium compounds with d-transition metals is considered and generalized. State diagrams and crystal structures of different phases known today are presented. Methods for telluride preparation in the poly- and monocrystal form and their chemico-analytical characteristics. Brief information about electrophysical properties is given. Perspective and present-day fields of application are marked. 262 refs.; 39 figs.; 23 tabs

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[en] The synthesis of the chalcogenide platings on Mo and friction of these platings in vacuum and helium within a wide temperature range was studied. The investigation results made it possible to determine the optimum conditions for synthesis of the platings, which ensure a low friction coefficient and minor wear. Chemical and X-ray phaseshift analyses of the synthesized platings were conUUUUUUUU phaseshift analyses of the synthesized platings were conUUU ducted. The kinetic curves showing films growth are plotted. As it follows from the obtained results, the temperature of synthesis offers a considerable effect on the rate of gas corrosion of molybdenum. The energies of activation of the sulfide-plating, selenium-plating and tellurium-plating processes amount to 16.2, 9.13 and 7.45 Kcal/mole, respectively. All the synthesized platings feature a hexagonal structure of the 2H=MoS₂ type and consist of one phase: MoS₂(a=3.163, c=12.353A)3; MoSe₂ (a=3.28, c=12.9A); MoTe₂ (a=3.52, c=13.97A). However, the X-ray phase-shift research of the MoS₂ and NoTe₂ platings synthesized at relatively low temperatures (up to 1000 deg C for MoS₂ and 500-700 deg C for MoTe₂) testifies to non-equilibrium disordered structure of the compounds. At higher temperatures (1000-1200 deg C for MoS₂ and 800 deg C for MoTe₂) the structure becomes more homogeneous and approaches the state of equilibrium. The MoSe₂ plating produced at 1000 deg C shows deficiency of Se (about 3 weight per cent) as compared to stoichiometry. There has been drawn scribed by the parabolic equation and is limited by the diffusion through the chalcogenide film. The constants of the rates and activation of energy the processes were calculated

[en] A thermographic study of Yb, Se and YbSe interaction with iodine has been made which is of interest to elucidate possibilities of crystallization by the method of chemical transport reactions using iodine as a transporting agent (the static version). Experiments have been conducted at 20-1000 deg C in vacuum of approximately 1,10^-4 mm Hg. On the basis of data obtained the formation of a compound of Se with iodine in the gas phase under conditions of the experiments has been suggested. The onset of interaction between Yb and Se has been established (approximately 300 deg C), as well as of YbSe with iodine (approximately 160 deg C). Using data of the differential-thermal analysis, some recommendations on realization of the chemical transport in the system YbSe-I₂ are proposed

[en] Volumetric changes which occur during sintering of vanadium with niobium and molybdenum diselenides are studied within 1200- 1500 deg C. It is shown that growth of briquettes during sintering of the above composites is due to preferential vanadium diffusion flow into the diselenide phase. Formation of the niobium- enriched (due to diselenide decomposition) alloy on the vanadiUm particle surface leads to a volumetric sintering activation- shrinkage

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