[en] It is important to evaluate the survivability of microcomputer systems under nuclear environment. The radiation effects of CMOS microcomputer systems is studied, the elemental concept of the survivability evaluation of microcomputer systems and the method of data collection and parameter definition are also provided. As an example, radiation effects data of some kind of microcomputer chips is processed, and its survival probability is estimated. The construction function model of microcomputer systems under nuclear environment is provided. The theory of acquiring survival probability from data of subsystem according to the model is presented

[en] The ionization irradiation effects were researched on very large scale integrated circuits (VLSI) made with CMOS technique under the neutron and γ-ray synthetical irradiation environment of a reactor. Through the experiments of the synthetical irradiation effects on different 80C196KC20 and PSD501B1 SCM (single chip microprocessor) system chips, it was found that the static current did not increase apparently. The conclusion is that under the neutron and γ-ray synthetical irradiation environment of a reactor, ionization effects of neutron on the VLSI made with CMOS technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and γ-ray. (authors)

[en] The characteristics' degradation and X-ray enhancement effects of N80C196KC20 chips were presented. The X-ray and ⁶⁰Co irradiations of N80C196KC20 chips from Intel Company were performed to investigate the response of operating currents I_cc. The operation failure symbolizes the total dose response of the chips. The total dose failure level of the chips is very low, and the γ total dose failure is about 165 Gy(Si). The operating current of the chip increases significantly when failure of the chip happens. The X-ray enhanced factor of N80C196KC20 chip is measured and the X-ray enhancement mechanism is studied. (authors)

[en] The high-energy neutron SEE on FLASHROM and testing methods were reported in the paper. 14 MeV neutron from T(d,n) is used for irradiating FLASHROM. Testing is done at neutron generator of Lanzhou University. The memory upset is observed and closed data is recorded. Finally the paper estimate closed cross section

[en] Because of topology's complexity, there may be several potential parasitic latch-up paths in a CMOS integrated circuit. All of the latch-up paths may have an effect on each other or one another due to different triggering dose rate, holding voltage and holding current and then one or more latch-up windows may appear. After we analyze the latch-up characteristic of CMOS integrated circuits in detail, a 'three-path' latch-up model is developed and used to explain the latch-up window phenomena reasonably. (authors)

[en] Total ionizing dose effects of Actel FPGA (Field Programmable Gate Array) chip A1280XL are analyzed in detail with interrupting dynamic bias voltage and dynamic bias voltage conditions. Experimentation results indicate that bias conditions have a great effect on total ionizing dose effects of FPGA chip. The damage threshold value of FPGA chip is 12.16 Gy(Si) under the dynamic bias voltage condition. The damage threshold value of FPGA chip is 33.2 Gy(Si) under interrupting dynamic bias voltage condition. The chip radiation effects are analyzed for programmable chip inside structure. Available hardening techniques are introduced to improve device radiation hardened total ionizing dose ability, such as using redundance technique for failure check and isolation, selecting proper shield material for shielding the devices. (authors)