[en] Chrysanthemum-like ZnO nanowire clusters with different Sb-doping concentrations were prepared using a hydrothermal process. The microstructures, morphologies, and dielectric properties of the as-prepared products were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM), and microwave vector network analyzer respectively. The results indicate that the as-prepared products are Sb-doped ZnO single crystallines with a hexagonal wurtzite structure, the flower bud saturation degree F_d is obviously different from that of the pure ZnO nanowire clusters, the good dielectric loss property is found in Sb-doped ZnO products with low density, and the dielectric loss tangent tanδ_e increases with the increase of the Sb-doping concentration in a certain concentration range

[en] Chrysanthemum-like ZnO nanowire clusters with different Mn-doping concentrations are prepared by a hydrothermal process. The microstructure, morphology and electromagnetic properties are characterized by x-ray diffractometer high-resolution transmission electron microscopy (HRTEM), a field emission environment scanning electron microscope (FEESEM) and a microwave vector network analyser respectively. The experimental results indicate that the as-prepared products are Mn-doped ZnO single crystalline with a hexagonal wurtzite structure, that the growth habit changes due to Mn-doping and that a good magnetic loss property is found in the Mn-doped ZnO products, and the average magnetic loss tangent tanδ_m is up to 0.170099 for 3% Mn-doping, while the dielectric loss tangent tanδ_e is weakened, owing to the fact that ions Mn²⁺ enter the crystal lattice of ZnO. (interdisciplinary physics and related areas of science and technology)

[en] The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence. (special topic)