[en] The ⁶⁰Co γ radiation responses of PMOSFET with dry oxidized gate dielectrics containing HCl have been investigated by the sub-threshold measurement technique. It is shown that the use of a minute amount of HCl can bring about a dramatic improvement in the radiation induced threshold voltage shifts and interface states generation. The optimum HCl introducing time is 10-150 seconds when HCl flux keeps constant (15 ml/min). An excessive amount of HCl will cause the hardness to degrade. This result is explained in terms of the positive and negative effects of HCl in SiO₂ dielectrics

[en] The influences of irradiation condition, annealing temperature and gate bias on CC4007 NMOS FETs, with and without F⁺ implanted, have been compared. It is found that the radiation-induced shift of threshold voltage can be restrained by implanting minute amount of fluorine ions. And, reliability of the F⁺ implanted devices was verified by smooth changes of both interface state charge and oxide state charge during the annealing. (authors)

[en] γ irradiation responses of fluorinated N channel and P channel field oxide MOSFETs have been investigated. The formation of radiation-induced oxide trapped charges and interface traps in field oxide has been restrained because F is similar to the electron traps, and can replace of some of weak and strain bonds by Si-F bonds. The field oxide depth is related to the radiation damage

[en] Proton radiation responses of Si gate P and N channel fluorinated MOSFETs processed with H₂ + O₂ and dry O₂ gate oxidation have been investigated. The data on threshold voltage and I_ds-V_gs characteristics show that the radiation-induced oxide charges and interface states can be restrained. The formation of Si-F bonds to substitute some weak bonds and strained bonds which easily become charge traps under irradiation and the relaxation of the Si/SiO₂ interface stress by F atoms are considered to explain the experimental result

[en] The author has investigated the irradiation response of the stacked structure of pMOS radiation sensitive field effect transistors which susceptibility is obviously higher than that of single pMOSFET. The differences of response sensitivity, linearity and stability are compared between two stacked modes: Single substrate and individual substrate. As well as between two bias during irradiation; 0V and read-out bias (constant source inject). The results show that stacked structure with single substrate have higher sensitivity than that with individual substrate, and the response under read-out bias has high sensitivity, linearity and stability. The re-use of pMOS dosimeter with stacked structure also has been studied. It is found that the sensitivity and linearity of the response of second radiation are higher than that of first radiation

[en] By making ionizing radiation experiment on SOS/CMOS 4082, we have analysed the principal mechanism of leakage current induced by irradiation. The worst bias condition of SOS-CMOS devices during irradiation is discussed as well

[en] High speed CMOS circuits 54HC04 were subjected to irradiations with the same total dose of 1 x 10⁴ Gy(Si) but at two different dose rates, and annealing measurements were performed at room temperature. The variance of both damage mechanism and failure mode for different dose rates was analysed, and the influence of dose rate on the reliability of high speed CMOS circuits in radiation environments was discussed

[en] Radiation effects of ⁶⁰Co γ ray and 4,7 and 30 MeV protons on LF 7650 CMOS operational amplifier were investigated. The damage mechanism of LF7650 was discussed. It is indicated that the mobility reduction of major carrier caused by ionizing and displacement damage is the chief mechanism causing the failure of CMOS operational amplifier irradiated by protons, and that is why the degradation of LF 7650 caused by protons is much more serious than that caused by ⁶⁰Co γ ray. In addition, a comparison of proton radiation effects on CMOS operational amplifier and MOSFET showed a significant difference in mechanism

[en] A systematic investigation of γ radiation effects in gate SiO₂ as a function of the fluorine ion implantation conditions was performed. It has been found that the generation of interface states and oxide trapped charges in fluorinated MOSFETs depends strongly on implantation conditions. The action of F in oxides is the conjunction of positive and negative effects. A model by forming Si-F bonds to substitute the other strained bonds which easily become charge traps under irradiation and to relax the bond stress on Si/SiO₂ interface is used for experimental explanation

[en] The CMOS operational amplifier LF7650 was exposed to 1 MeV electrons, and its radiation response to total dose level of electrons were investigated. The mechanisms of radiation damage and performance failure are discussed in terms of recovery of the radiation susceptive characteristics in relations with time after irradiation