[en] The author describes the fundamental knowledge of the Field Programmable Gate Array (FPGA) Device. Programming the FPGA chip with Very High Speed Integrated Circuit (VHSIC) Hardware Description Language (VHDL), the radiation sample is put emphasis on Actel's A1280A. The sample is radiated on the neutron simulation source

[en] The γ transient Ionizing radiation effects of Antifuse-based FPGA Circuit were investgated using 'Qiangguang-I' accelerator. It was detected that γ transient Ionizing radiation result in FPGA registers were reset. So, in order to resolve the problem, the especial hardened antifuse-based FPGA circuit was designed, that comprises FPGA, FRAM and especial read-write soft. The transient Ionizing radiation experiment data proved that the design was successful in achieving the FPGA information saving and resume, avoiding γ transient radiation effects. (authors)

[en] The design method of irradiation effects database is related in this paper. The structure of irradiation effects database is perfected by Delphi, query and calculation of the data have completed, and printing and outputting data report form have fulfilled. Therefore, data storage platform for reliability and vulnerability analyzing of harden irradiation effects of the component and system is offered

[en] The characteristics' degradation and X-ray enhancement effects of N80C196KC20 chips were presented. The X-ray and ⁶⁰Co irradiations of N80C196KC20 chips from Intel Company were performed to investigate the response of operating currents I_cc. The operation failure symbolizes the total dose response of the chips. The total dose failure level of the chips is very low, and the γ total dose failure is about 165 Gy(Si). The operating current of the chip increases significantly when failure of the chip happens. The X-ray enhanced factor of N80C196KC20 chip is measured and the X-ray enhancement mechanism is studied. (authors)

[en] The total dose effects of the ONO and MTM antifuse FPGA are compared. The threshold of The ONO antifuse 0.6 μm technology A1280XL is 33.2 Gy(Si) under no biased. However, the total ionizing dose (TID) tolerance of both the 0.6 μm and 0.25 μm MTM antifuse RT54SX shows 1000 Gy(Si). From the results, the MTM antifuse FPGAs demonstrate the very good total dose tolerance. (authors)

[en] Total ionizing dose effects of Actel FPGA (Field Programmable Gate Array) chip A1280XL are analyzed in detail with interrupting dynamic bias voltage and dynamic bias voltage conditions. Experimentation results indicate that bias conditions have a great effect on total ionizing dose effects of FPGA chip. The damage threshold value of FPGA chip is 12.16 Gy(Si) under the dynamic bias voltage condition. The damage threshold value of FPGA chip is 33.2 Gy(Si) under interrupting dynamic bias voltage condition. The chip radiation effects are analyzed for programmable chip inside structure. Available hardening techniques are introduced to improve device radiation hardened total ionizing dose ability, such as using redundance technique for failure check and isolation, selecting proper shield material for shielding the devices. (authors)