[en] The authors have studied photoluminescence (PL) from Er-doped Si-rich Si oxide (SRSO) films deposited by magnetron sputtering of an Er+Si+SiO₂ composite target in Ar or Ar+H₂ ambients. When the samples were annealed in N₂, for the film grown in an Ar ambient, the PL annealing behaviors reveal that the emissions from the film are defect-related and that the Er³⁺ PL at 1.54 μm is possibly triggered by a defect-mediated energy transfer process; while for the films grown in an Ar+H₂ ambient, the emissions from the SRSO matrix are suppressed and the Er PL intensities increase significantly but differently dependent on the Ar:H₂ ratios during sputtering. After annealing the samples in an Ar+5%H₂ (FG) ambient, however, almost no Er PL was observed from the film grown in the Ar ambient, while the Er PL intensities of the films grown in the Ar+H₂ ambient increase further compared to those annealed in N₂. Fourier transform infrared spectroscopy shows that the absorption of the samples after FG annealing is weaker than after annealing in N₂. The PL properties have also been compared to those of a sample grown by plasma enhanced chemical vapor deposition. The roles of hydrogen during sputtering and postdeposition annealing are discussed

[en] Amorphous erbium-doped silicon oxide (Si_yO_1-y:Er, y≥1/3) thin films are currently under investigation as a luminescent material system for complementary metal-oxide semiconductor compatible light emitters. We have grown films with y≅1/3 and investigated their properties using both positron annihilation and photoluminescence (PL) spectroscopies. Films were characterized ''as deposited,'' following irradiation with 1 MeV Si⁺ ions and after isochronal annealing. The PL yield from both Er³⁺ ions and sensitizing defects is reduced by irradiation, depending strongly on the irradiation fluence and reaching saturation at ∼4x10¹³ Si⁺/cm². Higher implantation fluences result in an open-volume defect structure in the film that persists after annealing. This annealing behavior is similar to that of an unrecoverable quenching effect on Er³⁺-related PL near 1540 nm, and we suggest that these open-volume defects may cause a decoupling of the Er³⁺ ions from sensitizing oxide point defects that form as a result of the film deposition process

[en] Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via electron-cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD) and annealed at 750-1000 ⁰C. The thickness of the oxide between Si quantum dots embedded in the film increases with increasing annealing temperature. This leads to a decreasing current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunnelling mechanism in large electric fields, we obtain an effective barrier height φ_eff of ∼0.7 ± 0.1 eV for an electron tunnelling through an oxide layer between Si quantum dots. The Frenkel-Poole effect can also be used to adequately explain the electrical conduction of the film under the influence of large electric fields. We suggest that at room temperature Si quantum dots can be regarded as traps that capture and emit electrons by means of tunnelling