[en] Buried damaged or amorphous layers were produced by implantation of 1 MeV As⁺ ions into Si (100) at room temperature. Then the samples were recrystallized by means of ion-beam annealing with 1.6 MeV Si⁺ ions at 300degC. Both the damaged and the annealed samples were observed by cross-sectional transmission electron microscopy (XTEM) and the microstructures were analyzed by high-resolution electron microscopy (HREM). It was found that ion-beam annealing is able to remove defects in the predamaged layer and the amounts of residual defects in this region are much less than that in the case of thermal annealing. For the ion-beam annealed samples, the results of HREM analysis showed that the ''end of range damage'' was mainly composed of small amounts of stacking faults with small size (<10 nm) and the ''clamshell defects'' were a few of the {113} defects with small size (<10 nm). (orig.)

[en] A patterned array of diamond-like carbon (DLC) was grown on anodic aluminum oxide (AAO) template by filtered cathodic arc plasma (FCAP) technique at room temperature. The diameters of patterned array of DLC were ∼150 nm, and the patterned array density was estimated to ∼10⁹ cm^-2. A broad asymmetric band ranging from 1000 cm^-1 to 2000 cm^-1 was detected by Raman spectrum attributed to characteristic band of DLC. The fraction of sp³ bonded carbon atoms of the patterned array of DLC was measured by X-ray photoelectron spectrum (XPS) and the ratio was about 62.4%. Field emission properties of the patterned array of DLC were investigated. A low turn-on field of 3.4 V/μm at 10 μA/cm² with an emission area of 3.14 mm² was achieved. The results indicated that the electrons were emitted under both the effect of enhanced field because of the geometry and the work function of the DLC sample. Based on Fowler-Nordheim plot, the values of work function for the patterned array of DLC were estimated in range of 0.38 to 1.75 from a linearity plot

[en] Via a specially widened anodic aluminum oxide (AAO) pore arrays, carbon nanodot arrays with uniform size and high density were obtained through filtered cathodic arc plasma (FCAP) technique. The AAO template was prepared in oxalic acid by multi-steps to get a specially enlarged opening which plays an important role in the deposition of nanodots. The morphology of the nanodots was studied by a field emission scanning electron microscopy (FESEM). The diameter of the as-prepared nanodot demonstrated here is about 100 nm at the bottom and less than 40 nm at the top, and the density was estimated to 10¹⁰ cm^-2. Field emission properties of the nanodot arrays were investigated and a low threshold field of 5.1 V/μm at 10 mA/cm² was obtained. In this paper, the carbon nanodot arrays grown as replicas of the specially widened AAO template may support a strategy to realize the fabrication of nanodot arrays with various materials.

[en] The tungsten single crystal has many excellent properties, namely a high melting point, high anti-creeping strength. Chemical vapor transportation deposition (CVTD) is a possible approach to achieve large-sized W single crystals for high-temperature application such as the cathode of a thermionic energy converter. In this work, CVTD W coatings were deposited on the monocrystalline molybdenum substrate (a tube with < 111 > axial crystalline orientation) using WCl₆ as a transport medium. The microstructures of the coatings were investigated by a scanning electron microscope (SEM) and electron backscatter diffraction (EBSD). The as-deposited coatings are hexagonal prisms—rough surfaces perpendicular to < 110 > with alternating hill-like bulges and pits at the side edges of the prisms, and flat surfaces perpendicular to < 112 > with arc-shaped terraces at the side faces. This can be explained by two-dimensional nucleation -mediated lateral growth model. Some parts of the coatings contain hillocks of an exotic morphology (noted as “abnormal growth”). The authors hypothesize that the abnormal growth is likely caused by the defects of the Mo substrate, which facilitate W nucleation sites, cause orientation difference, and may even form boundaries in the coatings. A dislocation density of 10⁶ to 10⁷ (counts/cm²) was revealed by an etch-pit method and synchrotron X-ray diffraction. As the depositing temperature rises, the dislocation density decreases, and no sub-boundaries are found on samples deposited over 1300 °C, as a result of atom diffusion and dislocation climbing. - Highlights: •The varied growth rate causes the different morphologies of different planes. •The W coating is a single crystal when only single hillocks appear. •The (110) plane tends to have the lowest dislocation density. •The dislocation density tends to decrease as the temperature increases.

[en] Highlights: • YAP:Ce and CsI(Tl) scintillation detectors are developed to detect heavy ions at the storage ring. • A high count rate of ∼10⁷ s⁻¹ is obtained with the YAP:Ce detector for heavy ion detection. • YAP:Ce detector shows good performance for DR experiment with 3.7 MeV/u ¹¹²Sn³⁵⁺. -- Abstract: The storage ring CSRm in Lanzhou provides good possibilities for electron-ion collision studies with cooled ion beams. To carry on the recombination experiment at the CSRm, a scintillation detector CsI(Tl) to detect the recombined ions was developed and tested. In addition, a YAP:Ce detector has been developed and installed at CSRm and capability of handling a high count rate of ∼10⁷ s⁻¹ has been obtained which is sufficient for the future dielectronic recombination experiment at the CSRm. The comparison of the characteristics of these two detectors is presented