[en] 165 newly hatched Arbor Acres broiler chickens were divided into three groups for studying the absorption speed and the utilization rate of different types and doses of ³H-vitamin A through feeding and metabolizing experiments. The results obtained are as follows: 1. All types of vitamin A could be absorbed by first-week chicken, and water-dispersible vitamin A is the best one. 2. Utilization rates for three types of ³H-vitamin A were: oil type 80.67%, power type 82.91%, water-dispersible type 89.43%. 3. Chikens absorbed ³H-vitamin A more quickly when they were 1-3 days old. Moreover, the absorption was mainly performed at the 2-4 hours after the intake of vitamin A. 4. The absorption of vitamin A in intestine was a continuing process lasted about 72 hours, but most of it was absorbed within 24-28 hours

[en] Sb-doping has been demonstrated to be a new approach to promote Cu(In,Ga)Se₂ (CIGS) thin film formation. To study the mechanism of Sb-promoted CIGS formation, we investigated the influence of Sb on the evolution of the critical intermediate Cu–Se phases, and found that Cu₃SbSe₃ species was formed. Phase change of the as-prepared Cu–Se compounds at elevated temperature was determined using the differential scanning calorimetry analysis. For samples containing Sb, the melting decomposition occurred at 507.1 °C, along with aggregation of nanocrystals into a bulk, while the morphology of the sample without Sb barely changed after heating. This result suggests that the mobile Cu₃SbSe₃ is likely the key intermediate responsible for Sb-promoted CIGS formation. Furthermore, we extended the scope of Sb-doping approach to solvothermal synthesis and CIGS nanocrystals were synthesized with significantly promoted kinetics in the presence of Sb. Based on these results, we propose the mechanism of Sb promoted CIGS formation. - Graphical abstract: Cu₃SbSe₃ mobile phase is likely the key species to promote the formation of Cu(In,Ga)Se₂, and significantly promoting effect by Sb is also found in the synthesis of Cu(In,Ga)Se₂ nanocrystals. Highlights: • In the presence of Sb, Cu₃SbSe₃ is formed while synthesizing the essential intermediate Cu–Se compounds for Cu(In,Ga)Se₂ materials. • Cu₃SbSe₃ shows high mobility at elevated temperature. • Cu₃SbSe₃ mobile phase is likely the key species to improve Cu(In,Ga)Se₂ thin film formation. • A synthesis methodology is developed to produce Cu(In,Ga)Se₂ nanocrystals with significantly promoted reaction kinetics

[en] With three theoretical models of nuclear effects on gluon distribution functions, the differential cross sections and the total cross section for associate production of J/ψ and γ with large P_T in high energy p-Fe collisions are calculated

[en] To investigate the effects of Sb doping on the kinetics of grain growth in Cu(In,Ga)Se₂ (CIGS) thin films during annealing, CIGS thin films were sputtered onto Mo coated substrates from a single CIGS alloy target, followed by chemical bath deposition of Sb₂S₃ thin layers on top of CIGS layers and subsequent annealing at different temperatures for 30 min in Se vapors. X-ray diffraction results showed that CIGS thin films were obtained directly using the single-target sputtering method. After annealing, the In/Ga ratio in Sb-doped CIGS thin films remained stable compared to undoped film, possibly because Sb can promote the incorporation of Ga into CIGS. The grain growth in CIGS thin films was enhanced after Sb doping, exhibiting significantly larger grains after annealing at 400 °C or 450 °C compared to films without Sb. In particular, the effect was strikingly significant in grain growth across the film thickness, resulting in columnar grain structure in Sb-doped films. This grain growth improvement may be led by the diffusion of Sb from the front surface to the CIGS-Mo back interface, which promoted the mass transport process in CIGS thin films. - Highlights: ► Cu(In,Ga)Se₂ (CIGS) thin films made by sputtering from a single CIGS target. ► Chemical bath deposition used to introduce antimony into CIGS absorber layers. ► In/Ga ratio decreases in Sb-doped annealed films, comparatively to undoped films. ► Sb-doped CIGS films are superior to undoped films in terms of grain-growth kinetics

[en] The hexagonal structure epsilon-Fe₃N powders were fabricated by the molten salt method. It is found that epsilon-Fe₃N exhibited much better electromagnetic attenuation performance, but its impedance match characteristic was worse than that of carbonyl iron based on the database of electromagnetic parameters. Reflection loss of the monolayer absorber for epsilon-Fe₃N/epoxy composite obtained by theoretical calculation was in good consistent with that by experiment measurement. The maximum reflection loss of epsilon-Fe₃N/epoxy composite was −7.6 dB at 7.28 GHz with a thickness of 2 mm, and the −6 dB absorbing bandwidth was 3.7 GHz. Furthermore, microwave absorbing properties of the double-layer absorber with epsilon-Fe₃N/epoxy as the absorbing layer and carbonyl iron/epoxy as the matching layer were investigated. The double-layer absorber had much better microwave absorbing performance. The maximum reflection loss was −49.8 dB at 12.62 GHz, and the bandwidth bellow −6 dB was as much as 14 GHz with a total thickness of 1.4 mm. - Highlights: • The hexagonal epsilon-Fe₃N powders were fabricated by the molten salt method. • Epsilon-Fe₃N had good dissipation property in comparison with that of CI. • CI had better impedance matching characteristic than that of epsilon-Fe₃N. • The calculated reflectivity of epsilon-Fe₃N was consistent with the measured value. • The reflectivity of double layer absorber based on epsilon-Fe₃N and CI was studied

No abstract available

[en] The authors present the phase shift of an electromagnetic wave passing through an atmospheric plasma layer. In this kind of plasma, the phase shift depends not only on the line average electron density and layer width, but also on the electron-neutral collision frequency. Since the collision frequency is close to or even larger than the incident microwave frequency, a one-dimensional code for the numerical solution of the wave equation with full time and space variables is established to give the phase shift. When the width and the pressure (hence the electron-neutral collision frequency) are known, the measurement of phase shift will uniquely determine the line average electrons density in an atmospheric plasma. (authors)

No abstract available

[en] The time delay-induced instability in an Internet congestion control model is investigated. The star topology is considered, and the link bandwidth ratio and the control gain are selected as the tunable parameters for congestion suppression. The stability switch boundary is obtained by the eigenvalue analysis for the linearized system around the equilibrium. To investigate the oscillatory congestion when the equilibrium becomes unstable, the center manifold reduction and the normal form theory are used to study the periodic oscillation induced by the delay. The theoretical analysis and numerical simulation show that the ratio between bandwidths of the trunk link and the regular link, rather than these bandwidths themselves, is crucial for the stability of the congestion control system. The present results demonstrate that it is not always effective to increase the link bandwidth ratio for stabilizing the system, and for some certain delays, adjusting the control gain is more efficient.

No abstract available