[en] To better carry out the research of CCD irradiation effects, the test method of CCD irradiation damage parameters was built. It can quantitatively test and analysis CCD irradiation damage accurately and efficiently combining with the radiation effects testing system of optical imaging devices in Xinjiang technical institute of physics and chemistry. Testing parameters including the dark signal, charge transfer efficiency, saturation output signal, photoresponse non-uniformity, fixed pattern noise, spectrum response and so on. The parameters' variation of one TDI-CCD in Co-60 ray source irradiation was obtained applying this method. It shows that the test method is in favor of analysis of CCD irradiation damage, which provides a good technical support for research of CCD irradiation effects and evaluation of irradiation performance. (authors)

[en] The total dose effect of an AD678 with a BiMOS process is studied. We investigate the performance degradation of the device in different bias states and at several dose rates. The results show that an AD678 can endure 3 krad(Si) at low dose rate and 5 krad(Si) at a high dose rate for static bias. The sensitive parameters to the bias states also differ distinctly. We find that the degradation is more serious on static bias. The underlying mechanisms are discussed in detail. (semiconductor integrated circuits)

[en] Background: Studies of the radiation effects on the floating-gate flash memory have been mainly focused on functionality measurement. Purpose: According to the present situation, flash memory was irradiated and annealed by "6"0Co γ rays, and the TID failure mechanism of the device was analyzed. Methods: The function parameters including DC and AC were measured using a large scale integrated circuit testing system. The range of radiation-sensitive parameters was extended using the Verigy 93000 instrument and the Shmoo test. Results: The results showed that the maximum operating frequency was radiation-sensitive parameter which has a significant change in radiation and annealing. Conclusions: Under strong electric field, due to the accumulation of oxide trapped charge and interface trap charge, the performance of charge pump circuit was deteriorated and the function of device was failed. Annealing characteristics indicated that the oxide trapped charge accounts for a major role. (authors)

[en] Total-irradiation-dose effect and room-temperature annealing behavior of a 10-bit bipolar analog-to-digital converter (ADC) irradiated by ⁶⁰Coγ-rays were investigated under different dose rates and bias conditions. The results show that the response of this kind of ADC circuit is very different under different conditions. The same electric parameters showed both enhanced low-dose-rate sensitivity effect (ELDRS) and time dependence effect (TDE). The further results show that 0V bias is the worst bias under low dose rate, while 5V bias is the worst under high dose rate. And the bias with the output terminal grounded via resistance has certain inhibition on the radiation damage. Finally, based on the space charge model and the fringing field effect, the differences of radiation damage and possible annealing mechanism was discussed. (authors)

[en] The non-ionizing energy loss (NIEL) can be used to predict device degradation caused by diaplacement damage in space radiation environment. NIEL, scattering cross section, Lindhard partition factor and displacements number for electrons on Gi, Ge and GaAs, ranges from 100 key to 200 MeV, are calculated via classical NIEL model. Considering that classical NIEL model fall to give an accurate displacements number at low energy region, the displacement damage generation mechanism is refined by molecular dynamics (MD) techniques, which gives a real amount of displacements used to modify classical NIEL. And how the new displacement threshold energy in MD influences calculation results is discussed. (authors)

[en] Radiation effects and room-temperature annealing behaviors of BiCMOS ADC(AD678) irradiated by ⁶⁰Co γ-rays at dose rate of 0.1 and 2 x 10^-4 Gy/s, respectively, are investigated in this paper. The results show that the device's responses in the sensitive parameters to the dose rates differ distinctly. Big differences occur in radiation effects between analog power supplying current and digital power supplying current. The parameters DNL, INL and Misscode are more sensitive to low dose rate, exhibiting enhanced-low-dose-rate-sensitivity. The damage mechanism of this special response was discussed combining the process and space charge model. (authors)

[en] By studying the total ionizing dose effect of commercial CMOS static random access memory (SRAM) under seven bias conditions, including static and dynamic state, the relationship of power dissipation current and functional error number versus total ionizing dose are obtained. The results show that bias condition has great influences on degradation of SRAM. Compared to the five static bias conditions, the dynamic operating state is relatively not sensitive to irradiation, with larger failure threshold dose. Total dose effect of SRAM is of the imprinting kind, and the stored state has significant influences on its irradiation damage effects. (authors)

[en] MoS${}_2$ is widely reported as anode material for sodium-ion batteries (SIBs). However, its ability to operate effectively across a wide temperature range and at high rates continues to pose fundamental challenges, limiting its further development. Herein, a monolayer Fe-doped MoS${}_2$/N,O-codoped C overlapping structure is designed and employed as an anode for wide-temperature-range SIBs. Fe doping imparts MoS${}_2$ electrode with zero bandgap characteristics, an increased interlayer spacing, and low sodium-ion diffusion energy barriers across wide operation temperatures. Impressively, Fe atoms doped into the MoS${}_2$ lattice can be reduced to superparamagnetic Fe${}^0$ nanocrystals of ≈2 nm during conversion reactions. In situ magnetometry reveals that these Fe${}^0$ nanocrystals can be used as electron acceptor in the formation of space charge zones with Na${}^{+}$, thereby triggering strong spin-polarized surface capacitance that facilitates fast sodium-ion storage over a wide temperature range. Consequently, the designed MoS${}_2$ electrode demonstrates exceptional fast-charging capability in half/full cells operating at -40-60 °C. This study provides novel perspectives on the utilization of heteroatom doping strategies in conversion-type electrode material design and proves the effectiveness of spin-polarized surface capacitance effect on enhancing sodium-ion storage over a wide temperature range. (© 2024 Wiley‐VCH GmbH)