[en] The YBCO high temperature superconducting thin films were deposited on ZrO₂ substrate by single target 'S' gun sputtering and in situ annealing method. The critical temperature of the films was in the range of 85∼90 K with the critical current density higher than 5 x 10⁵ A/cm² at 77 K . X ray diffraction analysis showed that the superconducting thin films were highly c-axis orientation. The composition of the films was analyzed by Rutherford back scattering and the RF-SQUID was used to measure the susceptibility

[en] A novel high mobility transparent conductive oxide thin film, tungsten-doped indium oxide (IWO), has been successfully grown on conventional glass substrates by reactive direct current magnetron sputtering technique from a metallic target. Analyses of x-ray photoelectron spectroscopy and x-ray diffraction reveal that tetravalent and hexavalent tungsten ions substitute for trivalent host indium ions without changing the crystalline structure of In₂O₃. IWO thin films were grown with resistivity of 4.4x10^-4 Ω cm, carrier mobility of 52.8 cm² V^-1 S^-1; transmittance exceeding 80% at wavelengths between 380 and 900 nm, and average roughness of 7.5 nm

[en] Molybdenum-doped ZnO (ZMO) transparent conductive thin films were prepared by dc reactive magnetron sputtering on glass substrates from metallic targets. The structure, surface morphology, chemical state, optical and electrical properties of ZMO films were studied. The XRD pattern confirmed that ZMO thin films were polycrystalline with the hexagonal crystal structure, and the surface morphology measured by AFM demonstrated that the surface was smooth and compact. Chemical state analysis revealed that molybdenum atoms existed mainly in Mo⁶⁺ and Mo⁵⁺ ions but not in only single oxidation states. The minimum resistivity of 7.9 × 10⁻⁴ Ω cm is obtained with a carrier mobility of 27.3 cm² V⁻¹ s⁻¹ and a carrier concentration of 3.1 × 10²⁰ cm⁻³, and the average transmittance is more than 85% in the visible light region. The refractive index and extinction coefficient at the wavelength of 550 nm are 1.853 and 7.0 × 10⁻³, respectively. The energy bands increase from 3.37 eV to 3.8 eV with the increase in carrier concentrations and the carrier effective mass m* is 0.33 times the electron mass

[en] Detailed measurements of I-V characteristics and temperature dependence of resistivity for thin film YBa₂Cu₃O_7-x in the absence of the applied field have been made. The I-V characteristics were found to follow a power law behavior V proportional to I^a(T), and the temperature dependence of α(T) and ρ(T) can be fitted with K-T theory. The results manifest quasi-two-dimensional nature of the oxide superconducting thin film YBa₂Cu₃O_7-x. A deviation of I-V curves from the power law behavior in higher currents is presents is presented and discussed

[en] Transparent conductive oxide thin film of tungsten-doped In₂O₃ (IWO) has been prepared by reactive direct current magnetron sputtering from the tungsten-embedded indium metal target. The effect of tungsten doping content on the optoelectrical properties of IWO films was investigated. The lowest resistivity of 2.7 x 10^-4 Ω.cm was reproducibly obtained, with carrier mobility greater than 57 cm² V^-1 s^-1 and carrier concentration of 4.0 x 10²⁰ cm^-3, as well as the transmission in visible light range exceeding 80%. X-ray diffraction measurements indicate that the as-deposited IWO films are well crystallized with a preferential orientation of (222)

[en] An amorphous transparent conductive oxide thin film of molybdenum-doped indium oxide (IMO) was prepared by reactive direct current magnetron sputtering at room temperature. The films formed on glass microscope slides show good electrical and optical properties: the low resistivity of 5.9 x 10^-4 Ω cm, the carrier concentration of 5.2 x 10² cm^-3, the carrier mobility of 20.2 cm² V^-1 s^-1, and an average visible transmittance of about 90.1%. The investigation reveals that oxygen content influences greatly the carrier concentration and then the photoelectrical properties of the films. Atomic force microscope evaluation shows that the IMO film with uniform particle size and smooth surface in terms of root mean square of 0.8 nm was obtained