[en] In this work, the response characteristics of the microwave limiter under various high power microwave irradiation are investigated via both simulation and experiment, and the simulation results match those of the experiment well. When the input power exceeds 6 dBm, a spike leakage phenomenon is observed. As the input power increases, the rise time and pulse width of the leakage peak decrease, whereas the leakage power gradually increases. However, the leakage power of the plateau firstly linearly increases, then gradually decreases, and finally slightly increases. Moreover, the pulse width and repetition frequency have almost no influence on the characteristics of leakage pulse, and the leakage energy decreases as the injection power increases. (authors)

[en] Eu³⁺ doped tellurite scintillating glasses were prepared by the conventional melt-quenching method. The physical and luminescent properties of glasses were investigated by DTA, density, transmittance spectra, photoluminescence spectra, and X-ray excited luminescence (XEL) spectra. The densities of the glasses are in the range from 5.89 g/cm³ to 6.05 g/cm³. The glasses exhibit intense red emissions upon 393 nm light and X-ray excitations. The maximum integral XEL intensity of the glasses is about 6% of that of commercial Bi₄Ge₃O₁₂ (BGO) scintillating crystal. The results reveal that Eu³⁺ doped tellurite glass could be a scintillator candidate used in X-ray detection field.

[en] We consider sparsity-constraint inversion method for detecting seismic small-scale discontinuities, such as edges, faults and cavities, which provide rich information about petroleum reservoirs. However, where there is karstification and interference caused by macro-scale fault systems, these seismic small-scale discontinuities are hard to identify when using currently available discontinuity-detection methods. In the subsurface, these small-scale discontinuities are separately and sparsely distributed and their seismic responses occupy a very small part of seismic image. Considering these sparsity and non-smooth features, we propose an effective L _2-L _0 norm model for improvement of their resolution. First, we apply a low-order plane-wave destruction method to eliminate macro-scale smooth events. Then, based the residual data, we use a nonlinear structure-enhancing filter to build a L _2-L _0 norm model. In searching for its solution, an efficient and fast convergent penalty decomposition method is employed. The proposed method can achieve a significant improvement in enhancing seismic small-scale discontinuities. Numerical experiment and field data application demonstrate the effectiveness and feasibility of the proposed method in studying the relevant geology of these reservoirs. (paper)

[en] Seismic diffractions are the responses of small-scale inhomogeneities or discontinuous geological features, which play a vital role in the exploitation and development of oil and gas reservoirs. However, diffractions are generally ignored and considered as interference noise in conventional data processing. In this paper, a new scheme for velocity analysis and imaging of seismic diffractions is proposed. Two steps compose of this scheme in our application. First, the plane-wave destruction method is used to separate diffractions from specular reflections in the prestack domain. Second, in order to accurately estimate migration velocity of the diffractions, the time-domain dip-angle gathers are derived from a Kirchhoff-based angle prestack time migration using separated diffractions. Diffraction events appear flat in the dip-angle gathers when imaged above the diffraction point with selected accurate migration velocity for diffractions. The selected migration velocity helps to produce the desired prestack imaging of diffractions. Synthetic and field examples are applied to test the validity of the new scheme. The diffraction imaging results indicate that the proposed scheme for velocity analysis and imaging of diffractions can provide more detailed information about small-scale geologic features for seismic interpretation. (paper)

[en] Contamination of seismic signal with noise is one of the main challenges during seismic data processing. Several methods exist for eliminating different types of noises, but optimal random noise attenuation remains difficult. Based on multi-scale, multi-directional locality of curvelet transform, the curvelet thresholding method is a relatively new method for random noise elimination. However, the high redundancy of a 3D curvelet transform makes its computational time and memory for massive data processing costly. To improve the efficiency of the curvelet thresholding denoising, a low-redundancy curvelet transform was introduced. The redundancy of the low-redundancy curvelet transform is approximately one-quarter of the original transform and the tightness of the original transform is also kept, thus the low-redundancy curvelet transform calls for less memory and computational resource compared with the original one. Numerical results on 3D synthetic and field data demonstrate that the low-redundancy curvelet denoising consumes one-quarter of the CPU time compared with the original curvelet transform using iterative thresholding denoising when comparable results are obtained. Thus, the low-redundancy curvelet transform is a good candidate for massive seismic denoising. (paper)

[en] Using the measured capacitance-voltage curves of Ni/Au Schottky contacts with different areas and the current-voltage characteristics for the AlGaAs/GaAs, AlGaN/AlN/GaN and In_0_._1_8 Al_0_._8_2N/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, the two-dimensional electron gas (2DEG) electron mobility for the prepared HFETs was calculated and analyzed. It was found that there is an obvious difference for the variation trend of the mobility curves between the III–V nitride HFETs and the AlGaAs/GaAs HFETs. In the III–V nitride HFETs, the variation trend for the curves of the 2DEG electron mobility with the gate bias is closely related to the ratio of the gate length to the drain-to-source distance. While the ratio of the gate length to the drain-to-source distance has no effect on the variation trend for the curves of the 2DEG electron mobility with the gate bias in the AlGaAs/GaAs HFETs. The reason is attributed to the polarization Coulomb field scattering in the III–V nitride HFETs. (semiconductor devices)

[en] The localization of diffractors is a great challenge for seismic data with a low signal to noise ratio, and it is also difficult to preserve the polarity characteristics of edge diffracted waves in the separated diffractions. In this paper, we present a method to locate the diffraction points and extract the diffractions from reflected data by using the Hilbert transform, the modified apex-shifted Radon transform (ASRT) and double-branch Radon transform. The Hilbert transform is used to weaken the impact of dominant reflection amplitude on detecting weaker diffractions in instantaneous phase data. The modified ASRT and double-branch Radon transform are applied to locate the apex of diffractions and preserve the polarity reversal of edge diffracted waves emitted from reflector discontinuities, respectively. The synthetic and real data applications illustrate that the method not only accurately locate the diffraction apices but also discriminate the responses of the small-scale scattering objects and the reflector edges. (paper)

[en] Using the measured capacitance—voltage and current—voltage characteristics of the rectangular AlN/GaN heterostructure field-effect transistors (HFETs) with the side-Ohmic contacts, it was found that the polarization Coulomb field scattering in the AlN/GaN HFETs was greatly weakened after the side-Ohmic contact processing, however, it still could not be ignored. It was also found that, with side-Ohmic contacts, the polarization Coulomb field scattering was much stronger in AlN/GaN HFETs than in AlGaN/AlN/GaN and In_0_._1_7Al_0_._8_3N/AlN/GaN HFETs, which was attributed to the extremely thinner barrier layer and the stronger polarization of the AlN/GaN heterostructure. (semiconductor devices)

[en] In this study, we investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with Ti/Al/Ni/Au gate electrodes using the measured capacitance-voltage, current-voltage characteristics, and micro-Raman spectroscopy. We found that the uneven distribution of the strain caused by the Schottky metals was a major factor that generates the polarization Coulomb field scattering in AlGaN/AlN/GaN HFETs, and after appropriate rapid thermal annealing (RTA) processes, the polarization Coulomb field scattering was greatly weakened and the two-dimensional electron gas electron mobility was improved. We also found that the Schottky barrier height and the DC characteristics of the devices became better after appropriate RTA. Of course, the electrical performances mentioned above became deteriorated after excessive annealing.

[en] The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3 nm and 6 nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barrier thickness. Moreover, using the measured capacitance-voltage and current-voltage characteristics of the fabricated heterostructure field-effect transistors (HFETs) with different Schottky areas on the two heterostuctures, the variations of electron mobility with different gate biases were investigated. Due to enhanced IFR scattering, the influence of polarization Coulomb field (PCF) scattering on electron mobility was found to decrease with increasing AlN barrier layer thickness. However, the PCF scattering remained an important scattering mechanism in the AlN/GaN HFETs.