[en] A novel adjusting target mechanism of three-dimensional attitude is presented according to the characteristics of the target transport subsystem in inertial confinement fusion (ICF). The mechanism consists of a tangent mechanism adjusting rotation angle and a set of orthogonal tangent mechanism adjusting two-dimensional deflection angles. The structural parameters of the adjusting target mechanism are analyzed according to principle errors, structure errors and motion errors of following. The analysis results indicate that the system error of the adjusting target mechanism is influenced by the displacement of the linear actuators, the actuator ball radius, the working radius of the tangent mechanism, the angle error of the inclined installation hole, the centralization error of the actuators, the orthogonal error of the two tangent mechanism, and the angle errors of the inclined target rod inclined rotation shaft. The errors of the inclined target rod and inclined rotation shaft are the two greatest impact factors, the spherical contact error is the next. By means of precise assembly and control system compensation, the accuracy of the adjusting target mechanism can be less than 0.1 mrad. (authors)

[en] Two dimensional (2D) nanomaterials are promising fundamental building blocks for use in the next-generation semiconductor industry due to their unique geometry and excellent (opto)-electronic properties. However, large scale high quality fabrication of 2D nanomaterials remains challenging. Thus, the development of controllable fabrication methods for 2D materials is essential for their future practical application. In this review, we will discuss the importance of the space-confined vapor deposition strategy in the controllable fabrication of 2D materials and summarize recent progress in the utilization of this strategy for the synthesis of novel materials or structures. Using this method, various high quality ultrathin 2D materials, including large-area graphene and boron nitride, ReS₂/ReSe₂, HfS₂, pyramid-structured multilayer MoS₂, and the topological insulators Bi₂Se₃ and Bi₂Te₃, have been successfully obtained. Additionally, by utilizing van der Waals epitaxy growth substrates such as mica or other 2D materials, patterned growth of 2D nanomaterials can be easily achieved via a surface-induced growth mechanism. Finally, we provide a short prospect for future development of this strategy. .

[en] Platinum disulfide (PtS₂) is a newly emerging 2D material, which possesses relatively high carrier mobility, a widely tunable band gap from 0.25 to 1.6 eV, and ultra-high air stability, showing a potential in electronics and optoelectronics. Here, for the first time, we study the temperature-dependent Raman spectra on PtS₂ with different thicknesses. It was found that with the temperature increase from 80 to 298 K, the ${{\mathrm{A}}_{1\mathrm{g}}}^2$ and ${{\mathrm{E}}_{\mathrm{g}}}^1$ modes of all samples show linear softening. Moreover, the linear softening with temperature of PtS₂ is much smaller than other 2D transition metal dichalcogenides, which could be attributed to the stronger interlayer coupling in PtS₂. Our work gives fundamental temperature-dependent vibrational information of PtS₂, which will be useful in future PtS₂–based electronic devices. (paper)

[en] In the current work, the ZnWO₄ and Bi@ZnWO₄ nanorods were synthesized. The phase composition, microstructure, optical and photochemical properties, as well as the photocatalytic activity to RhB of ZnWO₄ and Bi@ZnWO₄ were investigated. The XRD and XPS results suggest that Bi has been successfully deposited on the surface of ZnWO₄. The TEM and BET measurements suggest that the Bi deposition has no obvious influence on the microstructure of ZnWO₄. The Bi@ZnWO₄ exhibits the higher photocatalytic activity than that of ZnWO₄, which originates from the greater light absorption and more efficient separation of e⁻ − h⁺ pairs. In the photocatalysis of RhB, O₂⁻ and OH radicals play important roles.

[en] The unique morphology of 2D van der Waals materials enables them to withstand large deformations and significant nonuniform strain, potentially inducing a strong flexoelectric effect. Despite the size-dependent flexoelectric effect showing potential for modulating the optoelectronic performance of 2D van der Waals materials, it is far from being fully exploited owing to various challenges. Herein, the use of nanowires with different diameters as the bending media to fabricate 2D α-In${}_2$Se${}_3$/β-InSe heterojunctions with large curvatures of 0.1-1 µm${}^{-<!--\; ???\; -->1}$ is proposed. The significant band alignment modulation in α-In${}_2$Se${}_3$ resulting from the bending-induced flexoelectric effect is verified through Kelvin probe force microscopy. The strain-induced piezoelectric effect can be negated because of the weak vdW forces at the interface. The flexoelectric polarization in β-InSe is screened via the accumulated electrons in the unilateral depleted heterojunction. Compared to the flat heterojunction, the curved heterojunction with an average curvature of 0.9 µm${}^{-<!--\; ???\; -->1}$ shows 2.48-fold and 7.62-fold increases in open-circuit voltage and zero-biased responsivity, respectively. This study demonstrates the first successful modulation of photodetection in 2D heterojunctions by exploiting the flexoelectric effect, providing a new perspective for high-performance 2D vdW optoelectronic devices. (© 2024 Wiley‐VCH GmbH)