[en] A brief description of the physical process of dose enhancement effects produced by X-ray radiation on materials is given, with emphasis on the influence on electronic devices. The damages caused by X-ray radiation dose enhancement is more serious than that of γ-ray with higher energy

[en] The performance degradation and dose enhancement effects of CMOS circuits in an X-ray radiation environment are presented. The relative dose enhancement factors (RDEF) are measured and the RDEF of CMOS manufactured in different technological conditions are compared. The mechanism of X-ray dose enhancement for the material with higher atomic number is discussed

[en] Simulation of radiation response has played an important part on design, production, prediction and evaluation performance of radiation hardness integrated circuit and electronic equipment. Advanced photo current modeling have been researched, a method of transient ionizing radiation response simulation on integrated circuit under all dose-rate regime is being put forward. In the paper, device model and circuit model of transient ionizing radiation effects of operational amplifier have been established. The model has been implemented in the circuit simulator HSPCIE and extensive computer simulations of radiation response (both peak transient altitude and recovery time) have been performed. Some generalizations have been obtained. (authors)

[en] In this paper, the technology of system generated electromagnetic pulse (SGEMP) simulation experimentation on typical cable was researched. Several Problems were considered, including X-ray hardness, electromagnetic interference and voltage interference of measurment system. We proposed a new methodology for effectively measuring SGEMP response. The SGEMP effect while pulse x-ray irradiation cable was measured using the new test method and test system. (authors)

[en] A new phenomenon of single- event upset is introduced. The transient signal is produced in the output of analog circuits after a heavy ion strikes. The transient upset can influence the circuit connected with the output of analog circuits. For example, the output of operational amplifier can be connected with the input of a digital counter, and the pulse of sufficiently high transient output induced by an ion can increase counts of the counter. On the other hand, the transient voltage signal at the output of analog circuits can change the stage of other circuits. (authors)

[en] The behaviour degradation and dose enhancement effects of CMOS circuits in X-ray radiation environment are presented. The relative dose enhancement effects (RDEF) were measured. The RDEF's of CMOS with different technology are compared. The X-ray dose enhancement mechanism for the material of high atomic sequence number is investigated

[en] This paper introduces a high-precision and continuously tunable medium bounded-wave electromagnetic pulse simulator, which adopts a widely tunable, automated novel high voltage pulse source of compact size with fast rise time. Based on fiber transmission automation control is realized, anti-jamming problem is solved and HEMP simulation ability is promoted. Parameters of the simulator are:the rise time about 2.5 ns, FWHM about 23 ns, working volume 4 m × 4 m × 5.8 m, output continuously tunable electric field from 0.2 kV/m to 60 kV/m. (authors)

[en] Radiation effect and annealing character of typical CMOS irradiated by steady-state and transient pulse γ-rays were studyed, and the mechanism of CMOS radiation damage and annealing is analysed. In the paper, a latchup prevention system and a test circuit of weak current are also designed for the experimental research. The result shows that the ionizing radiation damage and annealing of CMOS devices is very different between the steady-state and transient pulse γ-rays radiation. With the same total ionizing dose, radiation damage of CMOS devices from steady-state γ-rays radiation is more than that from transient pulse γ-rays radiation, and with the same time, annealing irradiated by steady-state γ-rays is slowly than than irradiated by transient pulse γ-rays. (authors)

[en] The testing methods of γ total dose radiation effects on HSP2125 8 I/O signal-processing-circuits is provided in this paper. Considering the circuit structure, the result is analyzed. The results indicate that after irradiated by 1.5 x 10² Gy(Si) gamma total dose, HSP2125 type electronic circuits still can operate normally

[en] Radiation characteristic of transient dose rate and the changed rule of latchup current with the gamma dose rate in 'flash-1' were researched in the 80C31 Single-chip Microcontrollers. The latchup current characteristic of the 80C31 Single-chip Microcontrollers was analyzed in shallow deep latchup. (authors)