No abstract available

No abstract available

[en] The photoconductivity of PbMoO₄ and PbWO₄ single crystals is investigated at 80 K in the spectral region 2.0 to 5.0 eV. The spectral dependence of the photoconductivity is studied with ohmic and insulating contacts, and is discussed in conjunction with reported luminescence data. The present study reveals extrinsic and intrinsic photoconductivity in the case of PbMoO₄, whereas in the case of PbWO₄ only extrinsic photoconductivity is observed. (author)

[en] The effect of annealing on the resistivity of the amorphous Ag-Te films has been studied along with the temperature variation of the resistance of annealed Ag-Te films and the results are interpreted on the basis of phase transformation. (author)

[en] In, Pb, Zn, and Cu are used to prepare metal-semiconductor contacts on p-type PbTe thin films. They are analysed by I-V and C-V techniques to determine barrier heights, depletion widths, and carrier profiles. The effective barrier energies for In, Pb, and Zn are in the order of the band gap. For Cu on PbTe the effective barrier height is found to be smaller than the band gap. The carrier dependence of the barrier heights is studied and found to be consistent with the inversion model of Walpole and Nill for the In, Pb, and Zn devices. Cu barrier devices on the other hand do not show inversion. (author)

[en] The effect of 2 MeV electron bombardment at 300 K on the electrical (R, σ) properties of n- and p-CdGeAs₂ are studied. Specimens of n- and p-CdGeAs₂ are closely-compensated after sufficiently heavy electron bombardment, and have n-type conductivity with a resulting free electron density approximately 3 x 10¹⁷ cm^-3 at 300 K. Isochronal annealing experiments indicate two regions of restoring of R and σ, at about 300 to 450 K acceptor defect and at about 470 to 600 K donor defect annealing. (author)

[en] Measurements of the EPR spectrum of seven scheelite structure crystals doped with Mn²⁺ ions are performed in the temperature range from 4.2 to 350 K. Experimental data of a preceding paper are completed. The temperature dependent zero field splitting is discussed in terms of implicit and explicit contributions. Being the most important one the temperature effect of b₂⁰ is described with an Einstein model where the impurity force constant is related to regular cationic vibrations by a Born-Mayer potential. (author)

[en] The lattice reflectivity spectra of CuGaS₂, CuInS₂, and CuGasub(x)Insub(1-x)S₂ (x = 0.30, 0.50, 0.80) were analyzed by the Kramers-Kronig method. Phonon frequencies were determined by the energy position of extrema in the spectral dependence of the modulus of the dielectric function. A composition dependence was found of infrared active phonon frequencies of the CuGasub(x)Insub(1-x)S₂ solid solutions

[en] 0.5 mm thick specimens of dynamo strips of different composition were investigated. For the measurements a fully automated double-crystal diffractometer was used. The grain sizes were directly determined from the line widths, and the thickness of the material samples may range from 0.1 mm up to centimetres. The advantages of the method in comparison with conventional metallographic methods are discussed. Main advantages are lower expenditure of work, the possibility of spatial determination of grain sizes, and that metallographic pretreatment is unnecessary. However, a strong neutron source, e.g. a nuclear reactor, must be available

[en] Photo- (PL) and electroluminescence (EL) spectra of ZnO:Pr, ZnO:Gd, and ZnO:Er phosphors are reported. (author)