[en] Many aspects of the interaction of radiation with glasses are reviewed in this volume, with contributions from a broad scientific community. Several of the papers focus on the interdisciplinary approach required to connect technological applications to the basic interactions of energetic ions with insulators, reporting on the challenging problems that still remain to be solved. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry. The proceedings represent an ideal bridge between the sixth and planned seventh International Conference on Radiation Effects in Insulators to be held in Japan in 1993

[en] Diffusion under ion irradiation of lead in silicate glasses exhibits a strong enhancement along with striking redistributions. The results are discussed in terms of diffusion enhancement by electronic excitations and electric field building under ion irradiation. A tentative explanation by a percolation diffusion mechanisms is proposed. (author). 8 refs., 4 figs

[en] Diffusion coefficients of Be, Cu, Si and Ti in the metallic glass Fe₄₀Ni₄₀B₂₀ were measured in the temperature range 573-646 K using the technique of secondary ion mass spectrometry (SIMS). Temperature dependence of D was found to be Arrhenius in each case, a trend of increasing diffusivity with a decrease in the impurity atom size was noticed. Interpretation of the correlation between the observed value of activation energy Q and pre-factor D₀ suggests a cooperative mechanism of diffusion in the amorphous alloy. (author). 21 refs., 3 figs., 1 tab

[en] French nuclear borosilicate waste glass R7T7 was implanted with Kr-ions of 100 to 380 KeV energy at different temperatures up to 350^oC, so covering and extending range of temperatures expected in a repository for vitrified radioactive high level waste. Ion dose was kept constant at 1x10¹⁵ ions/ cm². Following implantation, and with unimplanted glasses for comparison, hardness and fracture toughness K_Ic was determined with Vickers indentation and leaching was done in deionized water at 100^oC and 150^oC. The leached glasses were analyzed by RBS and ERDA. A significant increase in K_Ic was observed for glasses implanted at room temperature. This is a positive effect which, however, diminished with increased implantation temperatures. This indicates that damage-induced stresses are decreased at higher implantation temperature. (author). 7 refs., 5 figs

[en] Results are reported on chemical interactions in amorphous silica implanted with reactive and non-reactive species. Samples were implanted with silicon, titanium, silver, tungsten, nitrogen and argon in the dose range between 1x10¹⁶ and 2x10¹⁷ ions cm^-2, at energies ranging between few tens of a keV and few hundreds of a keV. Most samples were also subjected to a second implant with nitrogen ions, at doses of 1x10¹'7 or 2x10¹⁷ ions cm^-2 Samples were mainly characterized by X-ray photoelectron spectroscopy and secondary ion mass spectrometry. Radiation damage and chemical effects have been discriminated. Precipitation of the implanted species, as well as chemical compound formation in the interaction both between the implanted species and the host matrix and, in the case of the double implant, between the implanted elements themselves were detected. (author). 43 refs., 4 figs

[en] Ion implantation may be used to change optical properties of glass and produce optical waveguides. If glass substrate is also a laser host material, this can lead to waveguide laser formation. A variety of laser glasses (silicate, phosphate, fluoride) have been studied in detail. In general the refractive index decreases in both electronic and nuclear interaction regions The percentage change appears to be from 0.4-0.8% in electronic interaction region, and 0.8-1.2% in nuclear collision region, which is sufficient to define a waveguide. The refractive index profile is influenced by several parameters, such as type of ion, ion energy, ion dose, and temperature of implant. Also annealing studies have been made to reduce loss, to check the thermal stability, and to study recovery of the index change. Overall the indications are that ion implanted laser glass waveguides are feasible. (author). 13 refs., 4 figs., 1 tab

[en] Chemical and physical transformations involved in ion implantation processes in glasses determine changes in mechanical and tribological properties, in network dilatation, in induced optical absorption and luminescence and in the composition and chemical behaviour as a function of different experimental conditions (ion, energy, dose, target temperature). Variations of chemical etch rate in HF are related to radiation damage and formation of compounds. A systematic study of etch rate changes in silica due to Ar, N, Si plus N implants has been performed. Structure modifications at depths greater than the corresponding implanted ion ranges are evidenced for nuclear deposited energy values greater than 10²² keV cm^-3. Formation of silicon oxynitrides reduces the etch rate values. (author). 8 refs., 3 figs., 1 tab

[en] Chemical effects of ion implantation in silicate glasses are reviewed with emphasis to those induced by inert ions, namely radiolytic decomposition of oxide components associated with the formation of oxygen bubbles and the change in the resistance to aqueous corrosion in connection with the long-term durability of vitrified radioactive waste. (author). 25 refs., 5 figs., 1 tab

[en] Tracer diffusion of ²²Na has been measured between room temperatures and 350^oC, without and with simultaneous irradiation by α-particles at two dose rates, corresponding to the lowest rate experienced by real glasses and to a rate surpassing the highest rate of real storage conditions. Both rates correspond to those of a 'pulsed irradiation', since overlapping of the damaged volumes occurs too seldom to set up the postulated relaxed structure allowing fast percolation of Na following an incubation period during irradiation with external beams of electrons, protons or heavy ions. The conclusion from presented experiments is therefore that radiation-enhancement of Na-diffusion under realistic α-decay rates is very small, even at 175^oC. (author). 13 refs., 4 figs., 1 tab