[en] GaAs substrates were implanted with 350 keV O⁺ ions (10¹⁴ to 10¹⁶ cm^-2) at room temperature and at 200⁰C, and used for liquid-phase epitaxy. Photoluminescence measurements show that the deposition of high-quality epitaxial layers is possible up to critical applied doses. At doses beyond these, residual damage detected by Rutherford backscattering experiments prevents single-crystalline epigrowth. The O⁺-implanted layers exhibit high resistance in n-GaAs at bias voltages of up to about 15 V, but do not in p-type material. A laser structure is introduced using an O⁺-implanted layer for stripe isolation. (author)

[en] Photoluminescence studies of oxygen-implanted gallium arsenide have been performed. It is shown that the levels created depend on impurities or defects that are present in the substrate before implantation. A level at 1.489 eV and another at 0.65 eV in GaAs are proved to be associated with oxygen. Another type of level has been seen at 1.482 and 1.472 eV. (author)

[en] Physicochemical studies of ¹¹B-implanted GaAs have been made by SIMS for boron profiles and by channelling and nuclear reaction to locate the ¹¹B in the lattice. This work shows that implanted boron is not located on well defined sites. Electrical resistivity has been measured and the observed compensation seems to be related to an interaction between implanted boron and something else pre-existing in the sample. (author)

[en] Be ion implantation in InAsSb and GaInSb has produced a higher yield of uniform high-performance IR detectors than diffusion or mesa etching techniques, and has led to FET and CCD fabrication. Composition profiles and electrical measurements have been used to understand and control junction properties. Breakdown voltages of 5 and 45 V were observed in InAsSb and GaInSb implanted diodes. (author)

[en] A scanned CW Nd:YAG laser was used to anneal GaAs and InP wafers that had been implanted with a 1 x 10¹⁴cm^-2 dose of 400 keVSe⁺ ions. The sheet carrier concentration (Nsub(s)) and mobility (μsub(s)) were determined by Van der Pauw measurements. For GaAs, the best results were obtained for unencapsulated samples at low scan rates (0.53 mm s^-1). Results are given for a single scan and for ten scans. Formation of (111) defect planes limits the electrical activity in the laser-annealed GaAs samples. For InP, the best results were obtained for encapsulated samples. There is also some evidence of defect plane formation in InP. (author)

[en] The fabrication and characterization of planar, ion-implanted GaAs p-n junction photodetectors is reported. The devices were made by implanting Be ions at 250 keV to a dose of 10¹⁴cm^-2 into unintentionally doped n-type GaAs layers grown by VPE and LPE techniques on <100> oriented, n⁺ substrates. These detectors are characterized by low leakage currents (< approximately 5 nA at 0.95 V sub(br) for 250 μm diameter devices). The quantum efficiency at 8750 A is 75% for devices with junction depths of 1.2μm, p-type doping levels of 10¹⁸cm^-3, and no intentional anti-reflection coating. Avalanche gains of 10 to 15 have been measured. (author)

[en] The annealing technique reported employs a cap comprised of a polished GaAs wafer in mechanical contact with the ion-implanted wafer surface. The anneal is then performed in a flowing hydrogen atmosphere, optionally in the presence of a controlled partial pressure of arsenic vapour. A comparison is made with annealing using sputter-deposited dielectric film encapsulants applied over the ion-implanted surface. The proximity cap annealing technique described preserves wafer surface quality and provides a particularly simplified and rapid method for removing ion implantation damage. Results are presented comparing the influence of annealing parameters on Hall mobilities, sheet carrier concentrations and apparent doping efficiencies for Si and Se ions implanted directly into Cr-doped semi-insulating GaAs. (author)

[en] Be-implanted LPE n-InP layers have exhibited p-n junction behaviour. C-V measurements have shown either abrupt or graded junction behaviour which was implant-fluence-dependent. SIMS results indicated that the graded junction behaviour was due to Be in-depth migration. Mesa diodes have shown ideality factors close to unity and avalanche breakdown in reverse bias. (author)