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[en] The software for simulation of oversurface part of neutralization of multicharged ion in which by Monte Carlo method the processes occurred during the flight of multicharged ion to the metal surface: resonance capture of metal electrons bymulticharge ion excited states, Auger transitions, resonance ionization of ion. The level and transition energies are calculated in Hartree-Fock approximation. The calculation for the case - argon ion near gold surface will be presented on the conference

[en] It was established that introduction of Mn impurities into MgF₂ crystals strongly decreases the accumulation speed of intrinsic radiation defects formed in these crystals after Co⁶⁰ gamma irradiation. It was shown that in irradiated non-doped crystals while annealing both F centers→M centers transitions and transformations of M centers of one type to another take place. In doped crystals the character of transformations is quite different and it is explained in frames of changing of radiation effects activation energy when impurity is intruded

[en] This paper presents the results of a TEM-investigation of the effect of postradiation annealing on the structure of molybdenum doped with helium atoms and irradiated with high-energy α-particles and fission neutrons. It was found that: the number of the interstitial atoms in the dislocation loops and of the vacancies in the helium bubbles increases with an increase in the temperature and annealing time, that is, the dislocation loops grow by emitting vacancies; the arising and growth of helium pores involves a stage characterised by the growing of vacancy voids; the helium bubbles arising near grain boundaries are formed on the side of the grain body with dislocation loops; the postradiation annealing of the structure involving dislocation loops produced by irradiation with 50 MeV α-particles and fission neutrons at 60 deg C results in the development of vacancy voids. The foregoing gives grounds to state that high temperature annealing or irradiation at high temperature (more than 0.3 T_melt.) constitutes the conditions under which dislocation loops are powerful sources of vacancies. Therefore, on condition that in the crystal structure of the irradiated material there are, for example, the He_mV_n complexes, vacancy oversaturation accounted for by thermal emission of vacancies by dislocation loops of radiation origin may be the main driving force for the nucleation and growth of vacancy voids. (author)

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[en] The EPR researches justify a model, according to which the bi component defects are formed on the basis of the Frenkel defects during exposure of alkali-haloid crystals. The first component of defect (F-center) is haloid vacancy with the electron located in its area, second one is negatively charged quasi molecule consisting of two atoms of a haloid. The distance between components predetermines their thermal stability (temperature of annihilation) and EPR parameters. The F-centers are responsible for broad band in EPR spectrum of crystals LiF and NaF, which disappears for registration in a quadrature with the phase of high-frequency modulation of magnetic field. Negatively charged quasimolecules located in the first coordination sphere of F-centers are stabile only for low temperature and annihilate with F-centers even when the temperature increases on some tens degrees. Quasimolecules located farther from F-centers are responsible for STS of EPR spectrum, the distribution of intensity and number of lines in which is characteristic for interaction of a not coupled electron with 14 haloid nucleuses. The intensity of STS lines and broad band are differently changed when the microwave power varies: for first the saturation of absorption is observed which is absent for second. When the doze of gamma-exposure increases the intensity of EPR broad band grows much slower than the intensity of lines STS because F-centers responsible for a broad band are a building material for formation of multi vacancy centers

[en] The boron ion implantation effect on metal-isolator-semiconductor (MIS) structure SiO₂ and SiO₂ - PSG (phospho silicate glass) layer defects has been investigated. The test MIS capacitors of 1,5 mm² area fabricated on phosphorus-doped (resistivity 4.5 Ω * cm) Si <100> wafers were studied. Silicon dioxide of thickness 100 nm was thermally grown in O₂ at 1000^OC with an addition of 3% HCl. The PSG films were 10 nm thick. In order to eliminate the gate insulator defect wafer area- and batch- variation effect on the obtained experimental results the insulating properties of MIS-structure insulator layers on the wafers that were fabricated in different batches and placed in the centre and periphery of the wafers were investigated. It was found that the gate insulator defects can widely vary from one wafer batch to another being similar for the wafers fabricated within one batch. The silicon dioxide defect value was determined to be of the same order within a wafer. Since the gate insulator defects value differs from batch to batch, the studies of the ion-implantation effect on the MIS-structure insulator layer defects were performed using the wafers oxidized within one batch. It was shown that the defects increase at silicon dioxide passivated by phospho silicate glass under ion implantation unlike the SiO₂ films. Insulator layer defects on the operational wafers exceed the defects on the auxiliary wafers. These defects can be annihilated by thermal anneal

[en] Noise Spectrum Density Changes in Silicon Diodes depending of the gamma-rays dose has been investigated. It was shown, that at the low-level irradiation Noise Spectrum Density decreased over the total frequency region from 10⁴ to 1.5*10⁷ Hz. The shift of the high-frequency bound to the low-frequency region occurs in this case. For the radiation fluxes higher than 2*10¹⁷ sm^-2 the high-frequency bound shifted in the opposite direction and Noise Spectrum Density in the high-frequency band increased. The simple models of gained shot noise and generation-recombination noise don't allow explain Noise Spectrum Density shape and in changes due to irradiation