AbstractAbstract
[en] Annealing studies are reported in the temperature range 800 to 15000C for the common colour centres created in type-I (nitrogen-containing) diamond by electron irradiation and annealing at 8000C. The concentrations of these centres, previously believed to be stable, are dramatically altered in this temperature range. Some of the changes are probably associated with vacancy-enhanced diffusion of the nitrogen. (author)
Primary Subject
Source
Albany, J.H. (ed.); Institute of Physics, London (UK); Institute of Physics Conference Series; no. 46; p. 327-333; ISBN 0 85498 137 3; ; 1979; p. 327-333; Institute of Physics; Bristol; International conference on defects and radiation effects in semiconductors; Nice, France; 11 - 14 Sep 1978
Record Type
Book
Literature Type
Conference
Country of publication
Descriptors (DEI)
Descriptors (DEC)
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