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META

Pulsed electron-beam annealing of phosphorus-implanted silicon

Inada, T.; Sugiyama, T.; Okano, N.; Ishikawa, Y.1980

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AbstractAbstract

No abstract available

Primary Subject

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY (A1300)

Source

Brief note.

Record Type

Journal Article

Journal

Electronics Letters; ISSN 0013-5194;

Worldcat

; v. 16(2); p. 54-55

Country of publication

Descriptors (DEI)

ANNEALING, CARRIER DENSITY, DOPED MATERIALS, ELECTRIC CONDUCTIVITY, ELECTRON BEAMS, ENERGY, ION IMPLANTATION, PHOSPHORUS IONS, PULSED IRRADIATION, SEMICONDUCTOR MATERIALS, SILICON

Descriptors (DEC)

ATOMIC IONS, BEAMS, CHARGED PARTICLES, ELECTRICAL PROPERTIES, ELEMENTS, HEAT TREATMENTS, IONS, IRRADIATION, LEPTON BEAMS, PARTICLE BEAMS, PHYSICAL PROPERTIES, SEMIMETALS

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