Formation and rearrangement of radiation defects in ion implanted semiconductors
Dvurechenskij, A.V.; Smirnov, L.S.
Proceedings of the 7. International conference on atomic collisions in solids. V. 21980
Proceedings of the 7. International conference on atomic collisions in solids. V. 21980
AbstractAbstract
[en] In this review processes related to the amorphization of an irradiated semiconductor layer have been considered. Data on the investigation into the homogeneity of amorphous layers of germanium and silicon in a wide range of the irradiation doses (1015 cm-2 - 3x1U17 cm-2) with Ne+, P+, B+, As+, Ar+, H2+ ions of 40-50 keV are presented. Thermal and radiation structure changes in the semiconductor layers bombarded with the ions have been discussed
Original Title
Obrazovanie i perestrojka radiatsionnykh defektov v obluchennykh ionami poluprovodnikakh
Source
Moskovskij Gosudarstvennyj Univ. (USSR); p. 284-286; 1980; p. 284-286; 7. International conference on atomic collisions in solids; Moscow (USSR); 19 - 23 Sep 1977; 20 refs.; 2 figs.
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