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Defect-aggregate regions determining excess charge carrier recombination in germanium irradiated with 660 MeV protons

No abstract available

Original Title

Oblasti skopleniya defektov, opredelyayushchie rekombinatsiyu neravnovesnykh nositelej zaryada v germanii, obluchennom protonami s ehnergiej 660 MeV

Primary Subject

Source

Deposited article. For English translation see the journal Soviet Physics - Semiconductors (USA).

Record Type

Journal Article

Journal

Fizika i Tekhnika Poluprovodnikov; ISSN 0015-3222;

; v. 16(9); p. 1723

Country of publication

Descriptors (DEI)