[en] Laser-induced diffusion of vacuum-evaporated aluminium films onto n-type Si substrates is applied to produce locally p⁺n junctions using a nitrogen pulse laser with 3 ns pulse duration (lambda = 337.1 nm). The average laser power reaching the targets is (3 - 5) x 10⁵ W. The resulting Al-Si alloy junctions are investigated by SEM (EBIC and SE voltage contrast) and I-V measurements. Irradiations are performed by single laser pulses in the range of energy densities between E/sub d/ = 1.0 J/cm² and 6.0 J/cm² in air at room temperature leading to an inhomogeneous lateral and spatial distribution of the Al doping concentration. For E/sub d/ = 4.1 J/cm² and an Al surface layer of 40 nm on low resistivity n-Si material (rho = 3 - 5 Ω cm) Al-nSi alloy diode can be produced by local melting having reverse currents of 3 x 10^-7 A at a reverse voltage of V/sub r/ = 1 V. EBIC studies on bevel faces of such laser-doped diodes reveal that the alloyed junctions penetrate into the depth of the n-type substrate between 0.8 and 4.5 μm dependent on E/sub d/. (author)