Effect of isochronous annealing on the photoluminescence of Ar+ implanted zinc selenide monocrystals
Georgobiani, A.N.; Zada-Uly, E.; Mullabaev, I.D.; Levonovich, B.N.; Serdyuk, N.V.
Experimental and theoretical physics. V. 21984
Experimental and theoretical physics. V. 21984
AbstractAbstract
[en] It is shown that photoluminescence (PL) of zinc selenide in ''green'' spectrum region is determined by the presence of zinc vacancies caused by Ar+ ion implantation. The PL ''green'' maximum shift into longwave region at heat treatment temperature >= 400 deg C is found. It is established that a strong annealing of radiation defects in zinc selenide occurs at temperatures >= 650 deg C
Original Title
Vliyanie izokhronnykh otzhigov na fotolyuminestsentsiyu monokristallov selenida tsinka, implantirovannykh Ar+
Source
AN SSSR, Moscow. Fizicheskij Inst; Kratkie Soobshcheniya po Fizike; (no.2); p. 55-59; 1984; p. 55-59; 7 refs.; 2 figs.
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