Conditioning of vacuum chamber by RF plasma
AbstractAbstract
[en] A new conditioning vaccum chamber system is presented. It consists in hydrogen plasm generation by microwaves with low electronic temperature (Te approx. 5eV) and low ionization degree. The ions and neutral atoms generated in the reaction: e + H2 -> H+ H+ e, bomb the chamber walls combinig themselves to impurities of surface and generating several compounds: H2O, CO, CH4, CO2 etc. The vacuum system operates continuosly and remove these compounds. A microwave system using magnetron valve (f=2,45 GHz, P=800W) was constructed for TBR (Brazilian tokamak). The gas partial pressures were monitored before, during and after conditioning showing the efficiency of the process. (M.C.K.)
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Condicionamento de camara de vacuo por plasmas de RF
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