Effect of Si+ and Sb+ ion implantation on chromium silicide formation at pulsed heat treatment
Bykovskij, Yu.A.; Zenkevich, A.V.; Kulikauskas, V.S.; Lyudchik, O.R.; Nevolin, V.N.
Proceedings of 17. All-union meeting on physics of charged particles interaction with crystals1988
Proceedings of 17. All-union meeting on physics of charged particles interaction with crystals1988
AbstractAbstract
[en] Dynamics of silicide formation in the chromium-ion-implantated silicon system at second treatment is studied. Implanted and nonimplanted silicon with Si+ and Sb+ ions with 25 keV energy and 2x1015 cm-2 and 6x1014 cm-2 doses correspondingly is used as a substrate. The temperature of samples during treatment varies within 750-1000degC limit depending the beam power. Investigation of silicon annealing quality, mass transfer character in the Cr-Si system is carried out by the methods of backscattering of He+ ions with 1.5 MeV enerfy channeling. Preliminarily implantation is shown to slow the process of silicide formation. 2 refs.; 2 figs
Original Title
Vliyanie implantatsii ionov Si+ i Sb+ na formirovanie silitsidov khroma pri impul'snoj termoobrabotke
Source
Moskovskij Gosudarstvennyj Univ., Moscow (USSR). Nauchno-Issledovatel'skij Inst. Yadernoj Fiziki; 163 p; 1988; p. 161-163; 17. All-union meeting on physics of charged particles interaction with crystals; Moscow (USSR); 25-27 May 1987
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